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Magnetotransport and lateral confinement in an inse van der waals heterostructure

In the last six years, indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can... Full description

Journal Title: 2D Materials 2018, Vol.5(3), p.035040 (6pp)
Main Author: Lee, Yongjin
Other Authors: Pisoni, Riccardo , Overweg, Hiske , Eich, Marius , Rickhaus, Peter , Patanè, Amalia , Kudrynskyi, Zakhar R , Kovalyuk, Zakhar D , Gorbachev, Roman , Watanabe, Kenji , Taniguchi, Takashi , Ihn, Thomas , Ensslin, Klaus
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: ; E-ISSN: ; DOI: 10.1088/2053-1583/aacb49
Link: http://dx.doi.org/10.1088/2053-1583/aacb49
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recordid: iop10.1088/2053-1583/aacb49
title: Magnetotransport and lateral confinement in an inse van der waals heterostructure
format: Article
creator:
  • Lee, Yongjin
  • Pisoni, Riccardo
  • Overweg, Hiske
  • Eich, Marius
  • Rickhaus, Peter
  • Patanè, Amalia
  • Kudrynskyi, Zakhar R
  • Kovalyuk, Zakhar D
  • Gorbachev, Roman
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Ihn, Thomas
  • Ensslin, Klaus
subjects:
  • Condensed Matter - Mesoscale And Nanoscale Physics
ispartof: 2D Materials, 2018, Vol.5(3), p.035040 (6pp)
description: In the last six years, indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
language: eng
source:
identifier: ISSN: ; E-ISSN: ; DOI: 10.1088/2053-1583/aacb49
fulltext: no_fulltext
url: Link


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titleMagnetotransport and lateral confinement in an inse van der waals heterostructure
creatorLee, Yongjin ; Pisoni, Riccardo ; Overweg, Hiske ; Eich, Marius ; Rickhaus, Peter ; Patanè, Amalia ; Kudrynskyi, Zakhar R ; Kovalyuk, Zakhar D ; Gorbachev, Roman ; Watanabe, Kenji ; Taniguchi, Takashi ; Ihn, Thomas ; Ensslin, Klaus
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descriptionIn the last six years, indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
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titleMagnetotransport and lateral confinement in an InSe van der Waals Heterostructure
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abstractIn the last six years, indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
doi10.1088/2053-1583/aacb49
orcidid0000-0001-5214-1727
issn20531583
eissn20531583
date2018-07-01