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Strongly (001)-textured mgo/co 40 fe 40 b 20 spin-tunnel contact on n-ge(001) and its spin accumulation: structural modification with ultrathin mg insertion by sputtering

The sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into G... Full description

Journal Title: Applied Physics Express 2016, Vol.9(4), p.043005 (4pp)
Main Author: Lee, Soogil
Other Authors: Kim, Sanghoon , Son, Jangyup , Baek, Seung-Heon Chris , Lee, Seok-Hee , Hong, Jongill
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: ; E-ISSN: ; DOI: 10.7567/APEX.9.043005
Link: http://dx.doi.org/10.7567/APEX.9.043005
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recordid: iop10.7567/APEX.9.043005
title: Strongly (001)-textured mgo/co 40 fe 40 b 20 spin-tunnel contact on n-ge(001) and its spin accumulation: structural modification with ultrathin mg insertion by sputtering
format: Article
creator:
  • Lee, Soogil
  • Kim, Sanghoon
  • Son, Jangyup
  • Baek, Seung-Heon Chris
  • Lee, Seok-Hee
  • Hong, Jongill
subjects:
  • Sputter-Technik
  • Grenzflächenstruktur
  • Monokristall
  • Einkristall
  • Polykristall
  • Halbleitersubstrat
  • Ferromagnetikum
  • Physics
ispartof: Applied Physics Express, 2016, Vol.9(4), p.043005 (4pp)
description: The sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.
language: eng
source:
identifier: ISSN: ; E-ISSN: ; DOI: 10.7567/APEX.9.043005
fulltext: fulltext
url: Link


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titleStrongly (001)-textured mgo/co 40 fe 40 b 20 spin-tunnel contact on n-ge(001) and its spin accumulation: structural modification with ultrathin mg insertion by sputtering
creatorLee, Soogil ; Kim, Sanghoon ; Son, Jangyup ; Baek, Seung-Heon Chris ; Lee, Seok-Hee ; Hong, Jongill
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descriptionThe sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.
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subjectSputter-Technik ; Grenzflächenstruktur ; Monokristall ; Einkristall ; Polykristall ; Halbleitersubstrat ; Ferromagnetikum ; Physics;
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titleStrongly (001)-textured MgO/Co 40 Fe 40 B 20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering
descriptionThe sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.
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abstractThe sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe 40 B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.
doi10.7567/APEX.9.043005
issn18820778
eissn18820786
date2016-04-01