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Effect of tunnel-spin polarization on spin accumulation in n-type ge(001)/mgo/co 40 fe 40 b 20

We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co 40 Fe 40 B 20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product ( R s A ) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 10 6 Ω·µm 2 ) is ne... Full description

Journal Title: Japanese Journal of Applied Physics 2016, Vol.55(9), p.090303 (4pp)
Main Author: Lee, Soogil
Other Authors: Kim, Sanghoon , Son, Jangyup , Cha, Jongin , Pathak, Sachin , Hong, Jongill
Format: Electronic Article Electronic Article
Language: English
ID: ISSN: ; E-ISSN: ; DOI: 10.7567/JJAP.55.090303
Link: http://dx.doi.org/10.7567/JJAP.55.090303
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recordid: iop10.7567/JJAP.55.090303
title: Effect of tunnel-spin polarization on spin accumulation in n-type ge(001)/mgo/co 40 fe 40 b 20
format: Article
creator:
  • Lee, Soogil
  • Kim, Sanghoon
  • Son, Jangyup
  • Cha, Jongin
  • Pathak, Sachin
  • Hong, Jongill
ispartof: Japanese Journal of Applied Physics, 2016, Vol.55(9), p.090303 (4pp)
description: We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co 40 Fe 40 B 20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product ( R s A ) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 10 6 Ω·µm 2 ) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 10 5 Ω·µm 2 ). The dependence of R s A on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.
language: eng
source:
identifier: ISSN: ; E-ISSN: ; DOI: 10.7567/JJAP.55.090303
fulltext: fulltext
url: Link


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descriptionWe found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co 40 Fe 40 B 20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product ( R s A ) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 10 6 Ω·µm 2 ) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 10 5 Ω·µm 2 ). The dependence of R s A on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.
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titleEffect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co 40 Fe 40 B 20
descriptionWe found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co 40 Fe 40 B 20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product ( R s A ) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 10 6 Ω·µm 2 ) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 10 5 Ω·µm 2 ). The dependence of R s A on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.
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abstractWe found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co 40 Fe 40 B 20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product ( R s A ) of this STC on n-type Ge after postannealing at 350 °C (1.97 × 10 6 Ω·µm 2 ) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 10 5 Ω·µm 2 ). The dependence of R s A on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes.
doi10.7567/JJAP.55.090303
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issn00214922
date2016-09-01