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Large-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties

Large-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy... Full description

Journal Title: The journal of physical chemistry. B 16 November 2006, Vol.110(45), pp.22382-6
Main Author: Li, Zhenjiang
Other Authors: Zhang, Jinli , Meng, Alan , Guo, Jianzhang
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 1520-6106 ; PMID: 17091978 Version:1
Link: http://pubmed.gov/17091978
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recordid: medline17091978
title: Large-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties
format: Article
creator:
  • Li, Zhenjiang
  • Zhang, Jinli
  • Meng, Alan
  • Guo, Jianzhang
subjects:
  • Transmission Electron Microscopes -- Usage
  • Silicon Carbides -- Chemical Properties
  • Silicon Carbides -- Structure
  • Aluminum Oxide -- Chemical Properties
ispartof: The journal of physical chemistry. B, 16 November 2006, Vol.110(45), pp.22382-6
description: Large-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed.
language: eng
source:
identifier: ISSN: 1520-6106 ; PMID: 17091978 Version:1
fulltext: no_fulltext
issn:
  • 15206106
  • 1520-6106
url: Link


@attributes
ID548637901
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid17091978
sourceidmedline
recordidTN_medline17091978
sourceformatXML
sourcesystemOther
pqid68128828
galeid156033277
display
typearticle
titleLarge-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties
creatorLi, Zhenjiang ; Zhang, Jinli ; Meng, Alan ; Guo, Jianzhang
ispartofThe journal of physical chemistry. B, 16 November 2006, Vol.110(45), pp.22382-6
identifierISSN: 1520-6106 ; PMID: 17091978 Version:1
descriptionLarge-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed.
languageeng
source
subjectTransmission Electron Microscopes -- Usage ; Silicon Carbides -- Chemical Properties ; Silicon Carbides -- Structure ; Aluminum Oxide -- Chemical Properties;
version4
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://pubmed.gov/17091978$$EView_this_record_in_MEDLINE/PubMed
openurlfulltext$$Topenurlfull_article
addlink$$Uhttp://exlibris-pub.s3.amazonaws.com/aboutMedline.html$$EView_the_MEDLINE/PubMed_Copyright_Statement
search
creatorcontrib
0Li, Zhenjiang
1Zhang, Jinli
2Meng, Alan
3Guo, Jianzhang
titleLarge-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties
descriptionLarge-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed.
general
017091978
1English
2MEDLINE/PubMed (U.S. National Library of Medicine)
3MEDLINE/PubMed (NLM)
sourceidmedline
recordidmedline17091978
issn
015206106
11520-6106
rsrctypearticle
creationdate2006
addtitleThe journal of physical chemistry. B
searchscope
0medline
1nlm_medline
2MEDLINE
scope
0medline
1nlm_medline
2MEDLINE
lsr4120061116
citationpf 22382 vol 110 issue 45
startdate20061116
enddate20061116
lsr30VSR-Enriched:[subject, pages, eissn, doi, pqid, galeid]
sort
titleLarge-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties
authorLi, Zhenjiang ; Zhang, Jinli ; Meng, Alan ; Guo, Jianzhang
creationdate20061116
lso0120061116
facets
frbrgroupid8473226843383420710
frbrtype5
newrecords20190701
languageeng
creationdate2006
collectionMEDLINE/PubMed (NLM)
prefilterarticles
rsrctypearticles
creatorcontrib
0Li, Zhenjiang
1Zhang, Jinli
2Meng, Alan
3Guo, Jianzhang
jtitleJournal Of Physical Chemistry. B
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextno_fulltext
addata
aulast
0Li
1Zhang
2Meng
3Guo
aufirst
0Zhenjiang
1Jinli
2Alan
3Jianzhang
au
0Li, Zhenjiang
1Zhang, Jinli
2Meng, Alan
3Guo, Jianzhang
atitleLarge-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties
jtitleThe journal of physical chemistry. B
risdate20061116
volume110
issue45
spage22382
pages22382-22386
issn1520-6106
formatjournal
genrearticle
ristypeJOUR
abstractLarge-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed.
pmid17091978
doi10.1021/jp063565b
eissn15205207
oafree_for_read
date2006-11-16