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Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates

In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with h... Full description

Journal Title: Nano letters 08 February 2012, Vol.12(2), pp.964-9
Main Author: Chen, Shao-Yu
Other Authors: Ho, Po-Hsun , Shiue, Ren-Jye , Chen, Chun-Wei , Wang, Wei-Hua
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1530-6992 ; PMID: 22224857 Version:1 ; DOI: 10.1021/nl204036d
Link: http://pubmed.gov/22224857
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recordid: medline22224857
title: Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates
format: Article
creator:
  • Chen, Shao-Yu
  • Ho, Po-Hsun
  • Shiue, Ren-Jye
  • Chen, Chun-Wei
  • Wang, Wei-Hua
subjects:
  • Magnetics
  • Transistors, Electronic
  • Graphite -- Chemistry
  • Silanes -- Chemistry
ispartof: Nano letters, 08 February 2012, Vol.12(2), pp.964-9
description: In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO(2)/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.
language: eng
source:
identifier: E-ISSN: 1530-6992 ; PMID: 22224857 Version:1 ; DOI: 10.1021/nl204036d
fulltext: fulltext
issn:
  • 15306992
  • 1530-6992
url: Link


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subjectMagnetics ; Transistors, Electronic ; Graphite -- Chemistry ; Silanes -- Chemistry
descriptionIn this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO(2)/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.
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descriptionIn this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO(2)/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.
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abstractIn this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry's phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO(2)/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.
doi10.1021/nl204036d
pmid22224857
date2012-02-08