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Nondestructive characterization of the structural quality and thickness of large-area graphene on various substrates

We demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in... Full description

Journal Title: Analytical chemistry 05 August 2014, Vol.86(15), pp.7192-9
Main Author: Liu, Yu-Lun
Other Authors: Yu, Chen-Chieh , Lin, Keng-Te , Wang, En-Yun , Yang, Tai-Chi , Chen, Hsuen-Li , Chen, Chun-Wei , Chang, Cheng-Kai , Chen, Li-Chyong , Chen, Kuei-Hsien
Format: Electronic Article Electronic Article
Language: English
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ID: E-ISSN: 1520-6882 ; PMID: 25019532 Version:1 ; DOI: 10.1021/ac501557c
Link: http://pubmed.gov/25019532
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recordid: medline25019532
title: Nondestructive characterization of the structural quality and thickness of large-area graphene on various substrates
format: Article
creator:
  • Liu, Yu-Lun
  • Yu, Chen-Chieh
  • Lin, Keng-Te
  • Wang, En-Yun
  • Yang, Tai-Chi
  • Chen, Hsuen-Li
  • Chen, Chun-Wei
  • Chang, Cheng-Kai
  • Chen, Li-Chyong
  • Chen, Kuei-Hsien
subjects:
  • Crystal Structure – Analysis
  • Graphene – Optical Properties
  • Graphene – Structure
  • Mass Spectrometry – Technology Application
  • Phase Transitions (Physics) – Analysis
ispartof: Analytical chemistry, 05 August 2014, Vol.86(15), pp.7192-9
description: We demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in the out-of-plane absorption coefficients (αTM); they are also correlated to the ratio of the intensities of the D and G bands in Raman spectra of graphene films. In addition, the electronic transition state of graphene within the UV regime assists the characterization of the structural quality. We also demonstrated that the intensities and shifts of the signals in Ψ spectra allow clear identification of the structural qualities and thicknesses, respectively, of graphene films. Moreover, this Ψ-based method can be further applied to graphene films coated on various substrates. In addition, mapping of the values of Ψ is a very convenient and useful means of rapidly characterizing both the structural quality and thickness of 2D materials at local areas. Therefore, this Ψ-based characterization method has great potential for application in the mass production of devices based on large-area graphene.
language: eng
source:
identifier: E-ISSN: 1520-6882 ; PMID: 25019532 Version:1 ; DOI: 10.1021/ac501557c
fulltext: fulltext
issn:
  • 15206882
  • 1520-6882
url: Link


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titleNondestructive characterization of the structural quality and thickness of large-area graphene on various substrates
creatorLiu, Yu-Lun ; Yu, Chen-Chieh ; Lin, Keng-Te ; Wang, En-Yun ; Yang, Tai-Chi ; Chen, Hsuen-Li ; Chen, Chun-Wei ; Chang, Cheng-Kai ; Chen, Li-Chyong ; Chen, Kuei-Hsien
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descriptionWe demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in the out-of-plane absorption coefficients (αTM); they are also correlated to the ratio of the intensities of the D and G bands in Raman spectra of graphene films. In addition, the electronic transition state of graphene within the UV regime assists the characterization of the structural quality. We also demonstrated that the intensities and shifts of the signals in Ψ spectra allow clear identification of the structural qualities and thicknesses, respectively, of graphene films. Moreover, this Ψ-based method can be further applied to graphene films coated on various substrates. In addition, mapping of the values of Ψ is a very convenient and useful means of rapidly characterizing both the structural quality and thickness of 2D materials at local areas. Therefore, this Ψ-based characterization method has great potential for application in the mass production of devices based on large-area graphene.
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abstractWe demonstrate an inspection technique, based on only one ellipsometric parameter, Ψ, of spectroscopic ellipsometry (SE), for the rapid, simultaneous identification of both the structural quality and thicknesses of large-area graphene films. The measured Ψ spectra are strongly affected by changes in the out-of-plane absorption coefficients (αTM); they are also correlated to the ratio of the intensities of the D and G bands in Raman spectra of graphene films. In addition, the electronic transition state of graphene within the UV regime assists the characterization of the structural quality. We also demonstrated that the intensities and shifts of the signals in Ψ spectra allow clear identification of the structural qualities and thicknesses, respectively, of graphene films. Moreover, this Ψ-based method can be further applied to graphene films coated on various substrates. In addition, mapping of the values of Ψ is a very convenient and useful means of rapidly characterizing both the structural quality and thickness of 2D materials at local areas. Therefore, this Ψ-based characterization method has great potential for application in the mass production of devices based on large-area graphene.
doi10.1021/ac501557c
pmid25019532
issn00032700
oafree_for_read
date2014-08-05