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Regeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes

Wet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are common... Full description

Journal Title: Biointerphases 02 March 2016, Vol.11(2), pp.019302
Main Author: Lacour, Vivien
Other Authors: Elie-Caille, Céline , Leblois, Thérèse , Dubowski, Jan J
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1559-4106 ; PMID: 26934871 Version:1 ; DOI: 10.1116/1.4942878
Link: http://pubmed.gov/26934871
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recordid: medline26934871
title: Regeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes
format: Article
creator:
  • Lacour, Vivien
  • Elie-Caille, Céline
  • Leblois, Thérèse
  • Dubowski, Jan J
subjects:
  • Surface Properties
  • Antibodies -- Metabolism
  • Arsenicals -- Chemistry
  • Gallium -- Chemistry
  • Palmitic Acids -- Metabolism
ispartof: Biointerphases, 02 March 2016, Vol.11(2), pp.019302
description: Wet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This...
language: eng
source:
identifier: E-ISSN: 1559-4106 ; PMID: 26934871 Version:1 ; DOI: 10.1116/1.4942878
fulltext: fulltext
issn:
  • 15594106
  • 1559-4106
url: Link


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titleRegeneration of a thiolated and antibody functionalized GaAs (001) surface using wet chemical processes
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ispartofBiointerphases, 02 March 2016, Vol.11(2), pp.019302
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subjectSurface Properties ; Antibodies -- Metabolism ; Arsenicals -- Chemistry ; Gallium -- Chemistry ; Palmitic Acids -- Metabolism
descriptionWet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This...
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descriptionWet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This...
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abstractWet chemical processes were investigated to remove alkanethiol self-assembled monolayers (SAMs) and regenerate GaAs (001) samples studied in the context of the development of reusable devices for biosensing applications. The authors focused on 16-mercaptohexadecanoic acid (MHDA) SAMs that are commonly used to produce an interface between antibodies or others proteins and metallic or semiconductor substrates. As determined by Fourier transform infrared absorption spectroscopy, among the investigated solutions of HCl, H2O2, and NH4OH, the highest efficiency in removing alkanethiol SAM from GaAs was shown by NH4OH:H2O2 (3:1 volume ratio) diluted in H2O. The authors observed that this result was related to chemical etching of GaAs that even in a weak solution of NH4OH:H2O2:H2O (3:1:100) proceeded at a rate of 130 nm/min. The surface revealed by a 2-min etching under these conditions allowed depositing successfully a new MHDA SAM with comparable quality and density to the initial coating. This...
doi10.1116/1.4942878
pmid26934871
date2016-03-02