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MoS2 transistors with 1-nanometer gate lengths

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger... Full description

Journal Title: Science (New York N.Y.), 07 October 2016, Vol.354(6308), pp.99-102
Main Author: Desai, Sujay B
Other Authors: Madhvapathy, Surabhi R , Sachid, Angada B , Llinas, Juan Pablo , Wang, Qingxiao , Ahn, Geun Ho , Pitner, Gregory , Kim, Moon J , Bokor, Jeffrey , Hu, Chenming , Wong, H-S Philip , Javey, Ali
Format: Electronic Article Electronic Article
Language: English
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ID: E-ISSN: 1095-9203 ; PMID: 27846499 Version:1
Link: http://pubmed.gov/27846499
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recordid: medline27846499
title: MoS2 transistors with 1-nanometer gate lengths
format: Article
creator:
  • Desai, Sujay B
  • Madhvapathy, Surabhi R
  • Sachid, Angada B
  • Llinas, Juan Pablo
  • Wang, Qingxiao
  • Ahn, Geun Ho
  • Pitner, Gregory
  • Kim, Moon J
  • Bokor, Jeffrey
  • Hu, Chenming
  • Wong, H-S Philip
  • Javey, Ali
subjects:
  • Silicon
  • Transistors
  • Electrostatics
  • Leakage
ispartof: Science (New York, N.Y.), 07 October 2016, Vol.354(6308), pp.99-102
description: Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~10 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
language: eng
source:
identifier: E-ISSN: 1095-9203 ; PMID: 27846499 Version:1
fulltext: no_fulltext
issn:
  • 10959203
  • 1095-9203
url: Link


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titleMoS2 transistors with 1-nanometer gate lengths
creatorDesai, Sujay B ; Madhvapathy, Surabhi R ; Sachid, Angada B ; Llinas, Juan Pablo ; Wang, Qingxiao ; Ahn, Geun Ho ; Pitner, Gregory ; Kim, Moon J ; Bokor, Jeffrey ; Hu, Chenming ; Wong, H-S Philip ; Javey, Ali
ispartofScience (New York, N.Y.), 07 October 2016, Vol.354(6308), pp.99-102
identifierE-ISSN: 1095-9203 ; PMID: 27846499 Version:1
descriptionScaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~10 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
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titleMoS2 transistors with 1-nanometer gate lengths
descriptionScaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~10 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
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abstractScaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~10 Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
pmid27846499
doi10.1126/science.aah4698
date2016-10-07