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Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS van der Waals Heterostructures

We have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm/(V s) at a density of 3 × 10 cm at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Lan... Full description

Journal Title: Nano letters 09 August 2017, Vol.17(8), pp.5008-5011
Main Author: Pisoni, Riccardo
Other Authors: Lee, Yongjin , Overweg, Hiske , Eich, Marius , Simonet, Pauline , Watanabe, Kenji , Taniguchi, Takashi , Gorbachev, Roman , Ihn, Thomas , Ensslin, Klaus
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1530-6992 ; PMID: 28686030 Version:1 ; DOI: 10.1021/acs.nanolett.7b02186
Link: http://pubmed.gov/28686030
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recordid: medline28686030
title: Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS van der Waals Heterostructures
format: Article
creator:
  • Pisoni, Riccardo
  • Lee, Yongjin
  • Overweg, Hiske
  • Eich, Marius
  • Simonet, Pauline
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Gorbachev, Roman
  • Ihn, Thomas
  • Ensslin, Klaus
subjects:
  • Mos2
  • Shubnikov−de Haas Oscillations
  • Gate-Defined Nanostructures
  • Valley Zeeman Effect
  • van Der Waals Heterostructures
ispartof: Nano letters, 09 August 2017, Vol.17(8), pp.5008-5011
description: We have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm/(V s) at a density of 3 × 10 cm at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
language: eng
source:
identifier: E-ISSN: 1530-6992 ; PMID: 28686030 Version:1 ; DOI: 10.1021/acs.nanolett.7b02186
fulltext: no_fulltext
issn:
  • 15306992
  • 1530-6992
url: Link


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titleGate-Defined One-Dimensional Channel and Broken Symmetry States in MoS van der Waals Heterostructures
creatorPisoni, Riccardo ; Lee, Yongjin ; Overweg, Hiske ; Eich, Marius ; Simonet, Pauline ; Watanabe, Kenji ; Taniguchi, Takashi ; Gorbachev, Roman ; Ihn, Thomas ; Ensslin, Klaus
ispartofNano letters, 09 August 2017, Vol.17(8), pp.5008-5011
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subjectMos2 ; Shubnikov−de Haas Oscillations ; Gate-Defined Nanostructures ; Valley Zeeman Effect ; van Der Waals Heterostructures
descriptionWe have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm/(V s) at a density of 3 × 10 cm at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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titleGate-Defined One-Dimensional Channel and Broken Symmetry States in MoS van der Waals Heterostructures
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abstractWe have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm/(V s) at a density of 3 × 10 cm at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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date2017-08-09