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Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction

The electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our findi... Full description

Journal Title: Applied Physics Letters 2011, Vol.99(4), pp.urn:issn:0003-6951
Main Author: Kitamura, Yuta
Other Authors: Shikoh, Eiji , Bisri, Satria Zulkarnaen , Takenobu, Taishi , Shiraishi, Masashi
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: ; ISSN: 0003-6951
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recordid: narcisrug:oai:pure.rug.nl:publications/80edaf36-7a22-461d-807e-8d7b0d0a934b
title: Electrical investigation of the interface band structure in rubrene single-crystal/nickel junction
format: Article
creator:
  • Kitamura, Yuta
  • Shikoh, Eiji
  • Bisri, Satria Zulkarnaen
  • Takenobu, Taishi
  • Shiraishi, Masashi
subjects:
  • Transistors
ispartof: Applied Physics Letters, 2011, Vol.99(4), pp.urn:issn:0003-6951
description: The electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.
language: eng
source:
identifier: ISSN: ; ISSN: 0003-6951
fulltext: fulltext_linktorsrc
issn:
  • 0003-6951
url: Link


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descriptionThe electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.
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titleElectrical investigation of the interface band structure in rubrene single-crystal/nickel junction
descriptionThe electronic structure of the interface between rubrene (C42H28) single crystal and ferromagnetic Ni is studied using an electrical method from a viewpoint of spintronics applications of organic single crystals. The Schottky barrier height at the interface is estimated to be 0.56 eV, and our finding is compared with previous results in spectroscopic method. This study clarifies the importance of electrical investigations of the Schottky barriers for various ferromagnet/organic systems and suggests that functionalization and carrier doping to rubrene single crystals are potential for obtaining the thinner barriers and yielding conclusive electrical spin injection.
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