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Weak localization in boron nitride encapsulated bilayer MoS2

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the sample... Full description

Journal Title: Physical Review B 2019, Vol.99(11), pp.urn:issn:2469-9950
Main Author: Papadopoulos, N.
Other Authors: Watanabe, Kenji , Taniguchi, Takashi , van der Zant, H.S.J. , Steele, G.A.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: ; ISSN: 2469-9950
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title: Weak localization in boron nitride encapsulated bilayer MoS2
format: Article
creator:
  • Papadopoulos, N.
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • van der Zant, H.S.J.
  • Steele, G.A.
subjects:
  • Encapsulation
  • Magnetotransport
  • Spin-Orbit Coupling
  • Weak Locatization
ispartof: Physical Review B, 2019, Vol.99(11), pp.urn:issn:2469-9950
description: We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to nonencapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.
language: eng
source:
identifier: ISSN: ; ISSN: 2469-9950
fulltext: fulltext_linktorsrc
issn:
  • 2469-9950
url: Link


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titleWeak localization in boron nitride encapsulated bilayer MoS2
creatorPapadopoulos, N. ; Watanabe, Kenji ; Taniguchi, Takashi ; van der Zant, H.S.J. ; Steele, G.A.
ispartofPhysical Review B, 2019, Vol.99(11), pp.urn:issn:2469-9950
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subjectEncapsulation ; Magnetotransport ; Spin-Orbit Coupling ; Weak Locatization
descriptionWe present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to nonencapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.
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titleWeak localization in boron nitride encapsulated bilayer MoS2
descriptionWe present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to nonencapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.
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