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Bandgap modulation of carbon nanotubes by encapsulated metallofullerenes

Motivated by the technical and economic difficulties in further miniaturising silicon-based transistors with the present fabrication technologies, there is a strong effort to develop alternative electronic devices, based, for example, on single molecules. Recently, carbon nanotubes have been success... Full description

Journal Title: Nature 2002, Vol.415(6875), p.1005
Main Author: Jhinhwan Lee
Other Authors: H. Kim , S.-J. Kahng , G. Kim , Y.-W. Son , J. Ihm , H. Kato , Z. W. Wang , T. Okazaki , H. Shinohara , Young Kuk
Format: Electronic Article Electronic Article
Language:
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ID: ISSN: 0028-0836 ; E-ISSN: 1476-4687 ; DOI: 10.1038/4151005a
Link: http://dx.doi.org/10.1038/4151005a
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recordid: nature_a10.1038/4151005a
title: Bandgap modulation of carbon nanotubes by encapsulated metallofullerenes
format: Article
creator:
  • Jhinhwan Lee
  • H. Kim
  • S.-J. Kahng
  • G. Kim
  • Y.-W. Son
  • J. Ihm
  • H. Kato
  • Z. W. Wang
  • T. Okazaki
  • H. Shinohara
  • Young Kuk
subjects:
  • Fullerene
  • Nanotubes
  • Nanostructure
  • Microelectronics
  • Fulleren
  • Nanometerbereich
  • Nanoröhrchen
  • Nanostruktur
  • Mikroelektronik
  • Fullerene
  • Metallofullerene
  • Sciences (General)
  • Physics
ispartof: Nature, 2002, Vol.415(6875), p.1005
description: Motivated by the technical and economic difficulties in further miniaturising silicon-based transistors with the present fabrication technologies, there is a strong effort to develop alternative electronic devices, based, for example, on single molecules. Recently, carbon nanotubes have been successfully used for nanometre-sized devices such as diodes, transistors, and random access memory cells. Such nanotube devices are usually very long compared to silicon-based transistors. Here, it is reported a method for dividing a semiconductor nanotube into multiple quantum dots with lengths of about 10 nm by inserting endohedral metallofullerenes, such as Gd encapsulated inside C82. The spatial modulation of the nanotube electronic bandgap is observed with a low-temperature scanning tunnelling microscope. It was found that a bandgap of about 0.5 eV is narrowed down to about 0.1 eV at sites where endohedral metallofullerenes are inserted. This change in bandgap can be explained by local elastic strain and charge transfer at metallofullerene sites. This technique for fabricating an array of quantum dots could be used for nano-electronics and nano-optoelectronics.
language:
source:
identifier: ISSN: 0028-0836 ; E-ISSN: 1476-4687 ; DOI: 10.1038/4151005a
fulltext: fulltext
issn:
  • 0028-0836
  • 00280836
  • 1476-4687
  • 14764687
url: Link


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titleBandgap modulation of carbon nanotubes by encapsulated metallofullerenes
creatorJhinhwan Lee ; H. Kim ; S.-J. Kahng ; G. Kim ; Y.-W. Son ; J. Ihm ; H. Kato ; Z. W. Wang ; T. Okazaki ; H. Shinohara ; Young Kuk
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descriptionMotivated by the technical and economic difficulties in further miniaturising silicon-based transistors with the present fabrication technologies, there is a strong effort to develop alternative electronic devices, based, for example, on single molecules. Recently, carbon nanotubes have been successfully used for nanometre-sized devices such as diodes, transistors, and random access memory cells. Such nanotube devices are usually very long compared to silicon-based transistors. Here, it is reported a method for dividing a semiconductor nanotube into multiple quantum dots with lengths of about 10 nm by inserting endohedral metallofullerenes, such as Gd encapsulated inside C82. The spatial modulation of the nanotube electronic bandgap is observed with a low-temperature scanning tunnelling microscope. It was found that a bandgap of about 0.5 eV is narrowed down to about 0.1 eV at sites where endohedral metallofullerenes are inserted. This change in bandgap can be explained by local elastic strain and charge transfer at metallofullerene sites. This technique for fabricating an array of quantum dots could be used for nano-electronics and nano-optoelectronics.
subjectFullerene ; Nanotubes ; Nanostructure ; Microelectronics ; Fulleren ; Nanometerbereich ; Nanoröhrchen ; Nanostruktur ; Mikroelektronik ; Fullerene ; Metallofullerene ; Sciences (General) ; Physics;
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