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Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devi... Full description

Journal Title: Nature Communications 2016, Vol.7
Main Author: Achim Woessner
Other Authors: Pablo Alonso-González , Mark B. Lundeberg , Yuanda Gao , Jose E. Barrios-Vargas , Gabriele Navickaite , Qiong Ma , Davide Janner , Kenji Watanabe , Aron W. Cummings , Takashi Taniguchi , Valerio Pruneri , Stephan Roche , Pablo Jarillo-Herrero , James Hone , Rainer Hillenbrand , Frank H. L. Koppens
Format: Electronic Article Electronic Article
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ID: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/ncomms10783
Link: http://dx.doi.org/10.1038/ncomms10783
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recordid: nature_a10.1038/ncomms10783
title: Near-field photocurrent nanoscopy on bare and encapsulated graphene
format: Article
creator:
  • Achim Woessner
  • Pablo Alonso-González
  • Mark B. Lundeberg
  • Yuanda Gao
  • Jose E. Barrios-Vargas
  • Gabriele Navickaite
  • Qiong Ma
  • Davide Janner
  • Kenji Watanabe
  • Aron W. Cummings
  • Takashi Taniguchi
  • Valerio Pruneri
  • Stephan Roche
  • Pablo Jarillo-Herrero
  • James Hone
  • Rainer Hillenbrand
  • Frank H. L. Koppens
subjects:
  • Condensed Matter - Mesoscale And Nanoscale Physics
  • Condensed Matter - Materials Science
ispartof: Nature Communications, 2016, Vol.7
description: Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.
language:
source:
identifier: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/ncomms10783
fulltext: fulltext
issn:
  • 2041-1723
  • 20411723
url: Link


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titleNear-field photocurrent nanoscopy on bare and encapsulated graphene
creatorAchim Woessner ; Pablo Alonso-González ; Mark B. Lundeberg ; Yuanda Gao ; Jose E. Barrios-Vargas ; Gabriele Navickaite ; Qiong Ma ; Davide Janner ; Kenji Watanabe ; Aron W. Cummings ; Takashi Taniguchi ; Valerio Pruneri ; Stephan Roche ; Pablo Jarillo-Herrero ; James Hone ; Rainer Hillenbrand ; Frank H. L. Koppens
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descriptionOpto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.
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titleNear-field photocurrent nanoscopy on bare and encapsulated graphene
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