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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene a... Full description

Journal Title: Nature Communications 2013, Vol.4, p.1624
Main Author: Min Sup Choi
Other Authors: Gwan-Hyoung Lee , Young-Jun Yu , Dae-Yeong Lee , Seung Hwan Lee , Philip Kim , James Hone , Won Jong Yoo
Format: Electronic Article Electronic Article
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ID: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/ncomms2652
Link: http://dx.doi.org/10.1038/ncomms2652
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recordid: nature_a10.1038/ncomms2652
title: Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
format: Article
creator:
  • Min Sup Choi
  • Gwan-Hyoung Lee
  • Young-Jun Yu
  • Dae-Yeong Lee
  • Seung Hwan Lee
  • Philip Kim
  • James Hone
  • Won Jong Yoo
subjects:
  • Biology
ispartof: Nature Communications, 2013, Vol.4, p.1624
description: Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.
language:
source:
identifier: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/ncomms2652
fulltext: fulltext
issn:
  • 2041-1723
  • 20411723
url: Link


@attributes
ID165126973
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1038/ncomms2652
sourceidnature_a
recordidTN_nature_a10.1038/ncomms2652
sourcesystemOther
pqid1321074088
display
typearticle
titleControlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
creatorMin Sup Choi ; Gwan-Hyoung Lee ; Young-Jun Yu ; Dae-Yeong Lee ; Seung Hwan Lee ; Philip Kim ; James Hone ; Won Jong Yoo
ispartofNature Communications, 2013, Vol.4, p.1624
identifier
source
descriptionAtomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.
subjectBiology;
version5
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://dx.doi.org/10.1038/ncomms2652$$EView_this_record_in_Nature
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Min Sup Choi
1Gwan-Hyoung Lee
2Young-Jun Yu
3Dae-Yeong Lee
4Seung Hwan Lee
5Philip Kim
6James Hone
7Won Jong Yoo
titleControlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
general
0Nature Publishing Group
110.1038/ncomms2652
2nature.com (Nature Publishing Group)
sourceidnature_a
recordidnature_a10.1038/ncomms2652
issn
02041-1723
120411723
rsrctypearticle
creationdate2013
searchscopenature_a
scopenature_a
lsr30VSR-Enriched:[description, pages, pqid, subject, issue]
sort
titleControlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
authorMin Sup Choi ; Gwan-Hyoung Lee ; Young-Jun Yu ; Dae-Yeong Lee ; Seung Hwan Lee ; Philip Kim ; James Hone ; Won Jong Yoo
creationdate20130327
facets
frbrgroupid8995164629552516426
frbrtype5
creationdate2013
collectionnature.com (Nature Publishing Group)
prefilterarticles
rsrctypearticles
creatorcontrib
0Min Sup Choi
1Gwan-Hyoung Lee
2Young-Jun Yu
3Dae-Yeong Lee
4Seung Hwan Lee
5Philip Kim
6James Hone
7Won Jong Yoo
jtitleNature Communications
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
au
0Min Sup Choi
1Gwan-Hyoung Lee
2Young-Jun Yu
3Dae-Yeong Lee
4Seung Hwan Lee
5Philip Kim
6James Hone
7Won Jong Yoo
atitleControlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
jtitleNature Communications
risdate20130327
volume4
spage1624
issn2041-1723
genrearticle
ristypeJOUR
pubNature Publishing Group
doi10.1038/ncomms2652
pages1624
issue1
date2013-03-27