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Unusual exciton–phonon interactions at van der Waals engineered interfaces

Raman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering p... Full description

Journal Title: Nano Letters 13 January 2017, Vol.17(2)
Main Author: Chow, Colin M
Other Authors: Yu, Hongyi , Jones, Aaron M , Yan, Jiaqiang , Mandrus, David G , Univ. of Tennessee, Knoxville, Tn , Taniguchi, Takashi , Watanabe, Kenji , Yao, Wang , Xu, Xiaodong
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 1530-6984 ; E-ISSN: 1530-6992 ; DOI: 10.1021/acs.nanolett.6b04944
Link: https://www.osti.gov/servlets/purl/1350949
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recordid: osti_s1350949
title: Unusual exciton–phonon interactions at van der Waals engineered interfaces
format: Article
creator:
  • Chow, Colin M
  • Yu, Hongyi
  • Jones, Aaron M
  • Yan, Jiaqiang
  • Mandrus, David G
  • Univ. of Tennessee, Knoxville, Tn
  • Taniguchi, Takashi
  • Watanabe, Kenji
  • Yao, Wang
  • Xu, Xiaodong
subjects:
  • Materials Science
  • Inorganic, Organic, Physical, And Analytical Chemistry
  • Exciton−Phonon Interaction
  • Hexagonal Boron Nitride
  • van Der Waals Interface
  • Wse2
  • Engineering
ispartof: Nano Letters, 13 January 2017, Vol.17(2)
description: Raman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons that are either traditionally inactive or weak. This Raman scattering can be amplified by nearly 2 orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly or via an A1' optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. Finally, this cross-platform electron–phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
language: eng
source:
identifier: ISSN: 1530-6984 ; E-ISSN: 1530-6992 ; DOI: 10.1021/acs.nanolett.6b04944
fulltext: fulltext
issn:
  • 1530-6984
  • 15306984
  • 1530-6992
  • 15306992
url: Link


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titleUnusual exciton–phonon interactions at van der Waals engineered interfaces
creatorChow, Colin M ; Yu, Hongyi ; Jones, Aaron M ; Yan, Jiaqiang ; Mandrus, David G ; Univ. of Tennessee, Knoxville, Tn ; Taniguchi, Takashi ; Watanabe, Kenji ; Yao, Wang ; Xu, Xiaodong
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subjectMaterials Science ; Inorganic, Organic, Physical, And Analytical Chemistry ; Exciton−Phonon Interaction ; Hexagonal Boron Nitride ; van Der Waals Interface ; Wse2 ; Engineering
descriptionRaman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons that are either traditionally inactive or weak. This Raman scattering can be amplified by nearly 2 orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly or via an A1' optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. Finally, this cross-platform electron–phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
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Raman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons that are either traditionally inactive or weak. This Raman scattering can be amplified by nearly 2 orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly or via an A1' optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. Finally, this cross-platform electron–phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.

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Raman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons that are either traditionally inactive or weak. This Raman scattering can be amplified by nearly 2 orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly or via an A1' optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. Finally, this cross-platform electron–phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.

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date2017-01-13