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Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning wi... Full description

Journal Title: Nature Communications 28 September 2018, Vol.9(1)
Main Author: Son, Jangyup
Other Authors: Kwon, Junyoung , Kim, Sunphil , Lv, Yinchuan , Yu, Jaehyung , Lee, Jong-Young , Ryu, Huije , Watanabe, Kenji , Taniguchi, Takashi , Garrido-Menacho, Rita , Mason, Nadya , Ertekin, Elif , Huang, Pinshane Y , Lee, Gwan-Hyoung , M. van Der Zande, Arend
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-06524-3
Link: https://www.osti.gov/servlets/purl/1511448
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recordid: osti_s1511448
title: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
format: Article
creator:
  • Son, Jangyup
  • Kwon, Junyoung
  • Kim, Sunphil
  • Lv, Yinchuan
  • Yu, Jaehyung
  • Lee, Jong-Young
  • Ryu, Huije
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Garrido-Menacho, Rita
  • Mason, Nadya
  • Ertekin, Elif
  • Huang, Pinshane Y
  • Lee, Gwan-Hyoung
  • M. van Der Zande, Arend
subjects:
  • Materials Science
  • Biology
ispartof: Nature Communications, 28 September 2018, Vol.9(1)
description: Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V-1 s-1 at carrier density of 4 × 1012 cm-2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.
language: eng
source:
identifier: ISSN: 2041-1723 ; E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-06524-3
fulltext: fulltext
issn:
  • 2041-1723
  • 20411723
url: Link


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titleAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
creatorSon, Jangyup ; Kwon, Junyoung ; Kim, Sunphil ; Lv, Yinchuan ; Yu, Jaehyung ; Lee, Jong-Young ; Ryu, Huije ; Watanabe, Kenji ; Taniguchi, Takashi ; Garrido-Menacho, Rita ; Mason, Nadya ; Ertekin, Elif ; Huang, Pinshane Y ; Lee, Gwan-Hyoung ; M. van Der Zande, Arend
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descriptionAtomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V-1 s-1 at carrier density of 4 × 1012 cm-2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.
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Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V-1 s-1 at carrier density of 4 × 1012 cm-2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

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