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Field-effect transistors built from all two-dimensional material components.

We demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the... Full description

Journal Title: ACS nano June 24, 2014, Vol.8(6), pp.6259-6264
Main Author: Roy, Tania
Other Authors: Tosun, Mahmut , Kang, Jeong Seuk , Sachid, Angada B , Desai, Sujay B , Hettick, Mark , Hu, Chenming C , Javey, Ali
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1936-086X ; DOI: 10.1021/nn501723y
Link: http://search.proquest.com/docview/1540137493/?pq-origsite=primo
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title: Field-effect transistors built from all two-dimensional material components.
format: Article
creator:
  • Roy, Tania
  • Tosun, Mahmut
  • Kang, Jeong Seuk
  • Sachid, Angada B
  • Desai, Sujay B
  • Hettick, Mark
  • Hu, Chenming C
  • Javey, Ali
subjects:
  • Layered Materials
  • Transition Metal Dichalcogenides
  • Graphene
  • Hexagonal Boron Nitride
  • Mos2
  • Heterolayers
  • Engineering
ispartof: ACS nano, June 24, 2014, Vol.8(6), pp.6259-6264
description: We demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the source/drain and the top-gate contacts. This transistor exhibits n-type behavior with an ON/OFF current ratio of 106, and an electron mobility of ∼33 cm2/V·s. Uniquely, the mobility does not degrade at high gate voltages, presenting an important advantage over conventional Si transistors where enhanced surface roughness scattering severely reduces carrier mobilities at high gate-fields. A WSe2–MoS2 diode with graphene contacts is also demonstrated. The diode exhibits excellent rectification behavior and a low reverse bias current, suggesting high quality interfaces between the stacked layers. In this work, all interfaces are based on van der Waals bonding, presenting a unique device...
language: eng
source:
identifier: E-ISSN: 1936-086X ; DOI: 10.1021/nn501723y
fulltext: fulltext
issn:
  • 1936086X
  • 1936-086X
url: Link


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titleField-effect transistors built from all two-dimensional material components.
creatorRoy, Tania ; Tosun, Mahmut ; Kang, Jeong Seuk ; Sachid, Angada B ; Desai, Sujay B ; Hettick, Mark ; Hu, Chenming C ; Javey, Ali
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descriptionWe demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the source/drain and the top-gate contacts. This transistor exhibits n-type behavior with an ON/OFF current ratio of 106, and an electron mobility of ∼33 cm2/V·s. Uniquely, the mobility does not degrade at high gate voltages, presenting an important advantage over conventional Si transistors where enhanced surface roughness scattering severely reduces carrier mobilities at high gate-fields. A WSe2–MoS2 diode with graphene contacts is also demonstrated. The diode exhibits excellent rectification behavior and a low reverse bias current, suggesting high quality interfaces between the stacked layers. In this work, all interfaces are based on van der Waals bonding, presenting a unique device...
subjectLayered Materials ; Transition Metal Dichalcogenides ; Graphene ; Hexagonal Boron Nitride ; Mos2 ; Heterolayers ; Engineering;
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