schliessen

Filtern

 

Bibliotheken

Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

In this paper, the authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFET) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interf... Full description

Journal Title: Micro & Nano Letters Jun 2011, Vol.6(6), pp.437-440
Main Author: Zhang, Qi
Other Authors: Qi, Junjie , Huang, Yunhua , Li, Xin , Zhang, Yue
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 17500443
Link: http://search.proquest.com/docview/1637584167/?pq-origsite=primo
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: proquest1637584167
title: Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
format: Article
creator:
  • Zhang, Qi
  • Qi, Junjie
  • Huang, Yunhua
  • Li, Xin
  • Zhang, Yue
subjects:
  • Zinc Oxide
  • Carriers
  • Field Effect Transistors
  • Focusing
  • Nanowires
  • Mesfets
  • Gates
  • Electron Beams
  • Semiconductor Devices
  • Applications (So)
  • Design Principles (Mt)
  • Electronics and Communications Milieux (General) (Ea)
  • (An)
ispartof: Micro & Nano Letters, Jun 2011, Vol.6(6), pp.437-440
description: In this paper, the authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFET) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests with a redshift as VDS increased and a p-type semiconductor transistor behaviour were observed. At the critical points, the value of VDS - VGS revealed a linear behaviour with the increasing VDS. The authors attributed these results to the gain enhanced by electron beam radiation and carrier-trapping process, while the shift may be associated with the image-force lowing effect.
language: eng
source:
identifier: E-ISSN: 17500443
fulltext: fulltext
issn:
  • 17500443
  • 1750-0443
url: Link


@attributes
ID684585453
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid1637584167
sourceidproquest
recordidTN_proquest1637584167
sourcesystemPC
pqid1637584167
display
typearticle
titleElectron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
creatorZhang, Qi ; Qi, Junjie ; Huang, Yunhua ; Li, Xin ; Zhang, Yue
ispartofMicro & Nano Letters, Jun 2011, Vol.6(6), pp.437-440
identifierE-ISSN: 17500443
descriptionIn this paper, the authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFET) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests with a redshift as VDS increased and a p-type semiconductor transistor behaviour were observed. At the critical points, the value of VDS - VGS revealed a linear behaviour with the increasing VDS. The authors attributed these results to the gain enhanced by electron beam radiation and carrier-trapping process, while the shift may be associated with the image-force lowing effect.
languageeng
source
subjectZinc Oxide ; Carriers ; Field Effect Transistors ; Focusing ; Nanowires ; Mesfets ; Gates ; Electron Beams ; Semiconductor Devices ; Applications (So) ; Design Principles (Mt) ; Electronics and Communications Milieux (General) (Ea) ; (An);
version3
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
backlink$$Uhttp://search.proquest.com/docview/1637584167/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
0Zhang, Qi
1Qi, Junjie
2Huang, Yunhua
3Li, Xin
4Zhang, Yue
titleElectron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
descriptionIn this paper, the authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFET) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests with a redshift as VDS increased and a p-type semiconductor transistor behaviour were observed. At the critical points, the value of VDS - VGS revealed a linear behaviour with the increasing VDS. The authors attributed these results to the gain enhanced by electron beam radiation and carrier-trapping process, while the shift may be associated with the image-force lowing effect.
general
0English
1The Institution of Engineering & Technology
2ANTE: Abstracts in New Technology & Engineering
3Solid State and Superconductivity Abstracts
4Mechanical & Transportation Engineering Abstracts
5Materials Science Database
6Advanced Technologies & Aerospace Database
7Engineering Database
8DELNET Engineering & Technology Collection
9Advanced Technologies Database with Aerospace
10Engineering Research Database
11Technology Research Database
12ProQuest Engineering Collection
13ProQuest Advanced Technologies & Aerospace Collection
14ProQuest Materials Science Collection
15ProQuest Technology Collection
16ProQuest SciTech Collection
17Materials Science & Engineering Database
18ProQuest Central (new)
19ProQuest Central Korea
20SciTech Premium Collection
21Technology Collection
22ProQuest One Academic
23Advanced Technologies & Aerospace Index (ProQuest)
24Engineering Index (ProQuest)
25Materials Science Collection (ProQuest)
26Engineering Collection (ProQuest)
sourceidproquest
recordidproquest1637584167
issn
017500443
11750-0443
rsrctypearticle
creationdate2011
addtitleMicro & Nano Letters
searchscope
01007421
11007481
21007526
31007851
41007852
51007853
61007945
71008866
81008886
91009127
1010000012
1110000013
1210000015
1310000022
1410000041
1510000045
1610000049
1710000053
1810000120
1910000195
2010000203
2110000209
2210000233
2310000250
2410000255
2510000258
2610000260
2710000265
2810000268
2910000348
3010000351
3110000353
3210000355
3310000356
3410000360
35proquest
scope
01007421
11007481
21007526
31007851
41007852
51007853
61007945
71008866
81008886
91009127
1010000012
1110000013
1210000015
1310000022
1410000041
1510000045
1610000049
1710000053
1810000120
1910000195
2010000203
2110000209
2210000233
2310000250
2410000255
2510000258
2610000260
2710000265
2810000268
2910000348
3010000351
3110000353
3210000355
3310000356
3410000360
35proquest
lsr43
01007421false
11007481false
21007526false
31007851true
41007852true
51007853true
61007945true
71008866true
81008886true
91009127true
1010000012false
1110000013false
1210000015false
1310000022false
1410000041true
1510000045true
1610000049true
1710000053true
1810000120true
1910000195false
2010000203false
2110000209false
2210000233true
2310000250true
2410000255true
2510000258true
2610000260true
2710000265true
2810000268true
2910000348true
3010000351false
3110000353false
3210000355true
3310000356true
3410000360true
startdate20110601
enddate20110601
citationpf 437 pt 440 vol 6 issue 6
lsr30VSR-Enriched:[doi, pqid, subject]
sort
titleElectron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
authorZhang, Qi ; Qi, Junjie ; Huang, Yunhua ; Li, Xin ; Zhang, Yue
creationdate20110601
lso0120110601
facets
frbrgroupid3538424917913239516
frbrtype5
languageeng
creationdate2011
collection
0ANTE: Abstracts in New Technology & Engineering
1Solid State and Superconductivity Abstracts
2Mechanical & Transportation Engineering Abstracts
3Materials Science Database
4Advanced Technologies & Aerospace Database
5Engineering Database
6DELNET Engineering & Technology Collection
7Advanced Technologies Database with Aerospace
8Engineering Research Database
9Technology Research Database
10ProQuest Engineering Collection
11ProQuest Advanced Technologies & Aerospace Collection
12ProQuest Materials Science Collection
13ProQuest Technology Collection
14ProQuest SciTech Collection
15Materials Science & Engineering Database
16ProQuest Central (new)
17ProQuest Central Korea
18SciTech Premium Collection
19Technology Collection
20ProQuest One Academic
21Advanced Technologies & Aerospace Index (ProQuest)
22Engineering Index (ProQuest)
23Materials Science Collection (ProQuest)
24Engineering Collection (ProQuest)
prefilterarticles
rsrctypearticles
creatorcontrib
0Zhang, Qi
1Qi, Junjie
2Huang, Yunhua
3Li, Xin
4Zhang, Yue
jtitleMicro & Nano Letters
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Zhang
1Qi
2Huang
3Li
aufirst
0Qi
1Junjie
2Yunhua
3Xin
4Yue
auinit1
0Q.
1J.
2Y.
3X.
au
0Zhang, Qi
1Qi, Junjie
2Huang, Yunhua
3Li, Xin
4Zhang, Yue
atitleElectron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
jtitleMicro & Nano Letters
risdate20110601
volume6
issue6
spage437
epage440
pages437-440
eissn17500443
formatjournal
genrearticle
ristypeJOUR
abstractIn this paper, the authors investigated the performance of ZnO nanowire-based metal-semiconductor field effect transistors (MESFET) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten-ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests with a redshift as VDS increased and a p-type semiconductor transistor behaviour were observed. At the critical points, the value of VDS - VGS revealed a linear behaviour with the increasing VDS. The authors attributed these results to the gain enhanced by electron beam radiation and carrier-trapping process, while the shift may be associated with the image-force lowing effect.
copStevenage
pubThe Institution of Engineering & Technology
urlhttp://search.proquest.com/docview/1637584167/
doi10.1049/mnl.2011.0229
date2011-06-01