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Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors.

The presence of direct bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. However, creation of barrier-free contacts which is necessary to achieve high performance in black phosphor... Full description

Journal Title: ACS nano April 28, 2015, Vol.9(4), pp.4138-4145
Main Author: Avsar, Ahmet
Other Authors: Vera-Marun, Ivan J , Tan, Jun You , Watanabe, Kenji , Taniguchi, Takashi , Castro Neto, Antonio H , Özyilmaz, Barbaros
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1936-086X ; DOI: 1936-086X ; DOI: 10.1021/acsnano.5b00289
Link: http://search.proquest.com/docview/1676595062/?pq-origsite=primo
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title: Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors.
format: Article
creator:
  • Avsar, Ahmet
  • Vera-Marun, Ivan J
  • Tan, Jun You
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Castro Neto, Antonio H
  • Özyilmaz, Barbaros
subjects:
  • Schottky Barrier
  • Black Phosphorus
  • Boron Nitride Encapsulation
  • Graphene Electrode
  • Hysteresis
  • Ohmic Contact
  • Work Function
ispartof: ACS nano, April 28, 2015, Vol.9(4), pp.4138-4145
description: The presence of direct bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. However, creation of barrier-free contacts which is necessary to achieve high performance in black phosphorus-based devices is challenging and currently limits their potential for applications. Here, we characterize fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source-drain electrodes and boron nitride as an encapsulation layer. The observation of a linear I sub(SD)-V sub(SD) behavior with negligible temperature dependence shows that graphene electrodes lead to barrier-free contacts, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field-effect transistor geometry. Such one-atom-thick conformal source-drain electrodes also enable the black phosphorus surface to be sealed, to avoid rapid degradation, with the inert boron nitride encapsulating layer. This architecture, generally applicable for other sensitive two-dimensional crystals, results in air-stable, hysteresis-free transport characteristics. Keywords: black phosphorus; graphene electrode; work function; Schottky barrier; ohmic contact; boron nitride encapsulation; hysteresis
language: eng
source:
identifier: E-ISSN: 1936-086X ; DOI: 1936-086X ; DOI: 10.1021/acsnano.5b00289
fulltext: no_fulltext
issn:
  • 1936086X
  • 1936-086X
url: Link


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titleAir-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors.
creatorAvsar, Ahmet ; Vera-Marun, Ivan J ; Tan, Jun You ; Watanabe, Kenji ; Taniguchi, Takashi ; Castro Neto, Antonio H ; Özyilmaz, Barbaros
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subjectSchottky Barrier ; Black Phosphorus ; Boron Nitride Encapsulation ; Graphene Electrode ; Hysteresis ; Ohmic Contact ; Work Function
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descriptionThe presence of direct bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. However, creation of barrier-free contacts which is necessary to achieve high performance in black phosphorus-based devices is challenging and currently limits their potential for applications. Here, we characterize fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source-drain electrodes and boron nitride as an encapsulation layer. The observation of a linear I sub(SD)-V sub(SD) behavior with negligible temperature dependence shows that graphene electrodes lead to barrier-free contacts, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field-effect transistor geometry. Such one-atom-thick conformal source-drain electrodes also enable the black phosphorus surface to be sealed, to avoid rapid degradation, with the inert boron nitride encapsulating layer. This architecture, generally applicable for other sensitive two-dimensional crystals, results in air-stable, hysteresis-free transport characteristics. Keywords: black phosphorus; graphene electrode; work function; Schottky barrier; ohmic contact; boron nitride encapsulation; hysteresis
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