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Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.

We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak... Full description

Journal Title: Nano letters June 10, 2015, Vol.15(6), pp.4006-4012
Main Author: Nanda, Gaurav
Other Authors: Goswami, Srijit , Watanabe, Kenji , Taniguchi, Takashi , Alkemade, Paul F A
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b00939
Link: http://search.proquest.com/docview/1687649965/?pq-origsite=primo
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title: Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.
format: Article
creator:
  • Nanda, Gaurav
  • Goswami, Srijit
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Alkemade, Paul F A
subjects:
  • Helium Ion Microscopy
  • Graphene
  • Hexagonal Boron Nitride (H-Bn)
  • Ion-Induced Damage
  • N-Doping
  • Self-Healing
ispartof: Nano letters, June 10, 2015, Vol.15(6), pp.4006-4012
description: We study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials") between the sp(2)-layers of graphene and h-BN promote self-healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene.
language: eng
source:
identifier: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b00939
fulltext: no_fulltext
issn:
  • 15306992
  • 1530-6992
url: Link


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titleDefect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.
creatorNanda, Gaurav ; Goswami, Srijit ; Watanabe, Kenji ; Taniguchi, Takashi ; Alkemade, Paul F A
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subjectHelium Ion Microscopy ; Graphene ; Hexagonal Boron Nitride (H-Bn) ; Ion-Induced Damage ; N-Doping ; Self-Healing
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descriptionWe study with Raman spectroscopy the influences of He(+) bombardment and the environment on beam-induced defects in graphene encapsulated in hexagonal boron nitride (h-BN). We show for the first time experimentally the autonomous behavior of the D' defect Raman peak: in contrast to the D defect peak, the D' defect peak is sensitive to the local environment. In particular, it saturates with ion dose in the encapsulated graphene. Electrical measurements reveal n-type conduction in the BN-encapsulated graphene. We conclude that unbound atoms ("interfacials") between the sp(2)-layers of graphene and h-BN promote self-healing of the beam-induced lattice damage and that nitrogen-carbon exchange leads to n-doping of graphene.
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titleDefect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.
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