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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS sub(2)) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidit... Full description

Journal Title: ACS nano July 28, 2015, Vol.9(7), pp.7019-7026
Main Author: Lee, Gwan-Hyoung
Other Authors: Cui, Xu , Kim, Young Duck , Arefe, Ghidewon , Zhang, Xian , Lee, Chul-Ho , Ye, Fan , Watanabe, Kenji , Taniguchi, Takashi , Kim, Philip , Hone, James
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1936-086X ; DOI: 1936-086X ; DOI: 10.1021/acsnano.5b01341
Link: http://search.proquest.com/docview/1700103108/?pq-origsite=primo
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title: Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
format: Article
creator:
  • Lee, Gwan-Hyoung
  • Cui, Xu
  • Kim, Young Duck
  • Arefe, Ghidewon
  • Zhang, Xian
  • Lee, Chul-Ho
  • Ye, Fan
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Kim, Philip
  • Hone, James
subjects:
  • Mos2
  • Contact Resistance
  • Graphene
  • Hexagonal Boron Nitride
  • Threshold Voltage
  • Two-Dimensional Materials
  • van Der Waals Heterostructure
ispartof: ACS nano, July 28, 2015, Vol.9(7), pp.7019-7026
description: Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS sub(2)) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS sub(2) layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm super(2) V super(-1) s super(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials. Keywords: two-dimensional materials; MoS sub(2); hexagonal boron nitride; graphene; van der Waals heterostructure; contact resistance; threshold voltage
language: eng
source:
identifier: E-ISSN: 1936-086X ; DOI: 1936-086X ; DOI: 10.1021/acsnano.5b01341
fulltext: no_fulltext
issn:
  • 1936086X
  • 1936-086X
url: Link


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titleHighly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
creatorLee, Gwan-Hyoung ; Cui, Xu ; Kim, Young Duck ; Arefe, Ghidewon ; Zhang, Xian ; Lee, Chul-Ho ; Ye, Fan ; Watanabe, Kenji ; Taniguchi, Takashi ; Kim, Philip ; Hone, James
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subjectMos2 ; Contact Resistance ; Graphene ; Hexagonal Boron Nitride ; Threshold Voltage ; Two-Dimensional Materials ; van Der Waals Heterostructure
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descriptionEmerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS sub(2)) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS sub(2) layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm super(2) V super(-1) s super(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials. Keywords: two-dimensional materials; MoS sub(2); hexagonal boron nitride; graphene; van der Waals heterostructure; contact resistance; threshold voltage
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