schliessen

Filtern

 

Bibliotheken

Tuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating

In Bi sub(2)Te sub(2)Se, the period of quantum oscillations arising from surface Dirac fermions can be increased sixfold using ionic liquid gating. At high gate voltages, the Fermi energy reaches the N = 1 Landau level in a 14-T field. This enables the 1/2 shift predicted for the Dirac spectrum to b... Full description

Journal Title: Physical Review B (Condensed Matter and Materials Physics) Jul 15, 2013, Vol.88(3)
Main Author: Xiong, Jun
Other Authors: Khoo, Yuehaw , Jia, Shuang , Cava, R , Ong, N
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 1098-0121 ; E-ISSN: 1550-235X
Link: http://search.proquest.com/docview/1709731052/?pq-origsite=primo
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: proquest1709731052
title: Tuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating
format: Article
creator:
  • Xiong, Jun
  • Khoo, Yuehaw
  • Jia, Shuang
  • Cava, R
  • Ong, N
subjects:
  • Oscillations
  • Depletion
  • Carriers
  • Voltage
  • Gating and Risering
  • Electric Potential
  • Gates
  • Liquids
  • Condensed Matter Physics (General) (So)
  • Electronics and Communications Milieux (General) (Ea)
  • Solid-State Physics (Ah)
ispartof: Physical Review B (Condensed Matter and Materials Physics), Jul 15, 2013, Vol.88(3)
description: In Bi sub(2)Te sub(2)Se, the period of quantum oscillations arising from surface Dirac fermions can be increased sixfold using ionic liquid gating. At high gate voltages, the Fermi energy reaches the N = 1 Landau level in a 14-T field. This enables the 1/2 shift predicted for the Dirac spectrum to be measured accurately. A surprising result is that liquid gating strongly enhances the surface mobility. By analyzing the Hall conductivity, we show that the enhancement occurs on only one surface. We present evidence that the gating process is fully reversible (hence consistent with band bending by the E field from the anion layer accumulated). In addition to the surface carriers, the experiment yields the mobility and density of the bulk carriers in the impurity band. By analyzing the charge accumulation vs gate voltage, we also obtain estimates of the depletion width and the areal depletion capacitance C sub(d)/A. The value of C sub(d)/A implies an enhanced electronic polarizability in the depletion region.
language: eng
source:
identifier: ISSN: 1098-0121 ; E-ISSN: 1550-235X
fulltext: fulltext
issn:
  • 10980121
  • 1098-0121
  • 1550235X
  • 1550-235X
url: Link


@attributes
ID1435366060
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid1709731052
sourceidproquest
recordidTN_proquest1709731052
sourcesystemPC
pqid1709731052
display
typearticle
titleTuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating
creatorXiong, Jun ; Khoo, Yuehaw ; Jia, Shuang ; Cava, R ; Ong, N
contributorXiong, Jun (correspondence author)
ispartofPhysical Review B (Condensed Matter and Materials Physics), Jul 15, 2013, Vol.88(3)
identifierISSN: 1098-0121 ; E-ISSN: 1550-235X
subjectOscillations ; Depletion ; Carriers ; Voltage ; Gating and Risering ; Electric Potential ; Gates ; Liquids ; Condensed Matter Physics (General) (So) ; Electronics and Communications Milieux (General) (Ea) ; Solid-State Physics (Ah)
descriptionIn Bi sub(2)Te sub(2)Se, the period of quantum oscillations arising from surface Dirac fermions can be increased sixfold using ionic liquid gating. At high gate voltages, the Fermi energy reaches the N = 1 Landau level in a 14-T field. This enables the 1/2 shift predicted for the Dirac spectrum to be measured accurately. A surprising result is that liquid gating strongly enhances the surface mobility. By analyzing the Hall conductivity, we show that the enhancement occurs on only one surface. We present evidence that the gating process is fully reversible (hence consistent with band bending by the E field from the anion layer accumulated). In addition to the surface carriers, the experiment yields the mobility and density of the bulk carriers in the impurity band. By analyzing the charge accumulation vs gate voltage, we also obtain estimates of the depletion width and the areal depletion capacitance C sub(d)/A. The value of C sub(d)/A implies an enhanced electronic polarizability in the depletion region.
languageeng
source
version2
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
backlink$$Uhttp://search.proquest.com/docview/1709731052/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
0Xiong, Jun
1Khoo, Yuehaw
2Jia, Shuang
3Cava, R
4Ong, N
titleTuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating
descriptionIn Bi sub(2)Te sub(2)Se, the period of quantum oscillations arising from surface Dirac fermions can be increased sixfold using ionic liquid gating. At high gate voltages, the Fermi energy reaches the N = 1 Landau level in a 14-T field. This enables the 1/2 shift predicted for the Dirac spectrum to be measured accurately. A surprising result is that liquid gating strongly enhances the surface mobility. By analyzing the Hall conductivity, we show that the enhancement occurs on only one surface. We present evidence that the gating process is fully reversible (hence consistent with band bending by the E field from the anion layer accumulated). In addition to the surface carriers, the experiment yields the mobility and density of the bulk carriers in the impurity band. By analyzing the charge accumulation vs gate voltage, we also obtain estimates of the depletion width and the areal depletion capacitance C sub(d)/A. The value of C sub(d)/A implies an enhanced electronic polarizability in the depletion region.
subject
0Oscillations
1Depletion
2Carriers
3Voltage
4Gating and Risering
5Electric Potential
6Gates
7Liquids
8Condensed Matter Physics (General) (So)
9Electronics and Communications Milieux (General) (Ea)
10Solid-State Physics (Ah)
1130
1290
1376
general
0English
1Electronics and Communications Abstracts
2Aerospace Database
3Solid State and Superconductivity Abstracts
4Advanced Technologies Database with Aerospace
5Technology Research Database
6ProQuest Advanced Technologies & Aerospace Collection
7ProQuest Technology Collection
8ProQuest SciTech Collection
9Advanced Technologies & Aerospace Database
10SciTech Premium Collection
11Technology Collection
sourceidproquest
recordidproquest1709731052
issn
010980121
11098-0121
21550235X
31550-235X
rsrctypearticle
creationdate2013
addtitlePhysical Review B (Condensed Matter and Materials Physics)
searchscope
01007389
11007416
21007481
31007944
410000012
510000015
610000022
710000045
810000053
910000120
1010000195
1110000203
1210000209
1310000233
1410000260
1510000265
16proquest
scope
01007389
11007416
21007481
31007944
410000012
510000015
610000022
710000045
810000053
910000120
1010000195
1110000203
1210000209
1310000233
1410000260
1510000265
16proquest
lsr43
01007389false
11007416false
21007481false
31007944false
410000012false
510000015false
610000022false
710000045false
810000053false
910000120false
1010000195false
1110000203false
1210000209false
1310000233false
1410000260false
1510000265false
contributorXiong, Jun
startdate20130715
enddate20130715
citationvol 88 issue 3
lsr30VSR-Enriched:[doi, pqid]
sort
titleTuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating
authorXiong, Jun ; Khoo, Yuehaw ; Jia, Shuang ; Cava, R ; Ong, N
creationdate20130715
lso0120130715
facets
frbrgroupid7709533337182106408
frbrtype5
languageeng
creationdate2013
topic
0Oscillations
1Depletion
2Carriers
3Voltage
4Gating and Risering
5Electric Potential
6Gates
7Liquids
8Condensed Matter Physics (General) (So)
9Electronics and Communications Milieux (General) (Ea)
10Solid-State Physics (Ah)
collection
0Electronics and Communications Abstracts
1Aerospace Database
2Solid State and Superconductivity Abstracts
3Advanced Technologies Database with Aerospace
4Technology Research Database
5ProQuest Advanced Technologies & Aerospace Collection
6ProQuest Technology Collection
7ProQuest SciTech Collection
8Advanced Technologies & Aerospace Database
9SciTech Premium Collection
10Technology Collection
prefilterarticles
rsrctypearticles
creatorcontrib
0Xiong, Jun
1Khoo, Yuehaw
2Jia, Shuang
3Cava, R
4Ong, N
jtitlePhysical Review B (Condensed Matter and Materials Physics)
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Xiong
1Khoo
2Jia
3Cava
4Ong
aufirst
0Jun
1Yuehaw
2Shuang
3R
4N
au
0Xiong, Jun
1Khoo, Yuehaw
2Jia, Shuang
3Cava, R
4Ong, N
addauXiong, Jun
atitleTuning the quantum oscillations of surface Dirac electrons in the topological insulator Bi sub(2)Te sub(2)Se by liquid gating
jtitlePhysical Review B (Condensed Matter and Materials Physics)
risdate20130715
volume88
issue3
issn1098-0121
eissn1550-235X
formatjournal
genrearticle
ristypeJOUR
abstractIn Bi sub(2)Te sub(2)Se, the period of quantum oscillations arising from surface Dirac fermions can be increased sixfold using ionic liquid gating. At high gate voltages, the Fermi energy reaches the N = 1 Landau level in a 14-T field. This enables the 1/2 shift predicted for the Dirac spectrum to be measured accurately. A surprising result is that liquid gating strongly enhances the surface mobility. By analyzing the Hall conductivity, we show that the enhancement occurs on only one surface. We present evidence that the gating process is fully reversible (hence consistent with band bending by the E field from the anion layer accumulated). In addition to the surface carriers, the experiment yields the mobility and density of the bulk carriers in the impurity band. By analyzing the charge accumulation vs gate voltage, we also obtain estimates of the depletion width and the areal depletion capacitance C sub(d)/A. The value of C sub(d)/A implies an enhanced electronic polarizability in the depletion region.
urlhttp://search.proquest.com/docview/1709731052/
doi10.1103/PhysRevB.88.035128
date2013-07-15