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Superior Current Carrying Capacity of Boron Nitride Encapsulated Carbon Nanotubes with Zero-Dimensional Contacts.

We report fabrication and characterization of hexagonal boron nitride (hBN)-encapsulated carbon nanotube (CNT) field effect transistors, which are coupled to electrical leads via zero-dimensional contacts. Device quality is attested by the ohmic contacts and observation of Coulomb blockade with a si... Full description

Journal Title: Nano letters October 14, 2015, Vol.15(10), pp.6836-6840
Main Author: Huang, Jhao-Wun
Other Authors: Pan, Cheng , Tran, Son , Cheng, Bin , Watanabe, Kenji , Taniguchi, Takashi , Lau, Chun Ning , Bockrath, Marc
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b02716
Link: http://search.proquest.com/docview/1722418993/?pq-origsite=primo
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title: Superior Current Carrying Capacity of Boron Nitride Encapsulated Carbon Nanotubes with Zero-Dimensional Contacts.
format: Article
creator:
  • Huang, Jhao-Wun
  • Pan, Cheng
  • Tran, Son
  • Cheng, Bin
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Lau, Chun Ning
  • Bockrath, Marc
subjects:
  • Current Carrying Capacity
  • Carbon Nanotube
  • Hbn Encapsulation
ispartof: Nano letters, October 14, 2015, Vol.15(10), pp.6836-6840
description: We report fabrication and characterization of hexagonal boron nitride (hBN)-encapsulated carbon nanotube (CNT) field effect transistors, which are coupled to electrical leads via zero-dimensional contacts. Device quality is attested by the ohmic contacts and observation of Coulomb blockade with a single periodicity in small bandgap semiconducing nanotubes. Surprisingly, hBN-encapsulated CNT devices demonstrate significantly enhanced current carrying capacity; a single-walled CNT can sustain >180 mu A current or, equivalently, a current density of similar to 2 10 super(10) A/cm super(2), which is a factor of 6-7 higher than devices supported on SiO sub(2) substrates. Such dramatic enhancement of current carrying capacity arises from the high thermal conductivity of hBN and lower hBN-CNT interfacial thermal resistance and has implications for carbon electronic applications. Keywords: Current carrying capacity; carbon nanotube; hBN encapsulation
language: eng
source:
identifier: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b02716
fulltext: no_fulltext
issn:
  • 15306992
  • 1530-6992
url: Link


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titleSuperior Current Carrying Capacity of Boron Nitride Encapsulated Carbon Nanotubes with Zero-Dimensional Contacts.
creatorHuang, Jhao-Wun ; Pan, Cheng ; Tran, Son ; Cheng, Bin ; Watanabe, Kenji ; Taniguchi, Takashi ; Lau, Chun Ning ; Bockrath, Marc
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descriptionWe report fabrication and characterization of hexagonal boron nitride (hBN)-encapsulated carbon nanotube (CNT) field effect transistors, which are coupled to electrical leads via zero-dimensional contacts. Device quality is attested by the ohmic contacts and observation of Coulomb blockade with a single periodicity in small bandgap semiconducing nanotubes. Surprisingly, hBN-encapsulated CNT devices demonstrate significantly enhanced current carrying capacity; a single-walled CNT can sustain >180 mu A current or, equivalently, a current density of similar to 2 10 super(10) A/cm super(2), which is a factor of 6-7 higher than devices supported on SiO sub(2) substrates. Such dramatic enhancement of current carrying capacity arises from the high thermal conductivity of hBN and lower hBN-CNT interfacial thermal resistance and has implications for carbon electronic applications. Keywords: Current carrying capacity; carbon nanotube; hBN encapsulation
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