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Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed.

Semiconducting, two-dimensional molybdenum disulfide (MoS sub(2)) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrime... Full description

Journal Title: Nano letters November 11, 2015, Vol.15(11), pp.7307-7313
Main Author: Kufer, Dominik
Other Authors: Konstantatos, Gerasimos
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b02559
Link: http://search.proquest.com/docview/1732600811/?pq-origsite=primo
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title: Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed.
format: Article
creator:
  • Kufer, Dominik
  • Konstantatos, Gerasimos
subjects:
  • Hfo2
  • Molybdenum Disulfide
  • Tmdc
  • Encapsulation
  • Photodetectors
ispartof: Nano letters, November 11, 2015, Vol.15(11), pp.7307-7313
description: Semiconducting, two-dimensional molybdenum disulfide (MoS sub(2)) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrimental and uncontrollable effects of environmental adsorbates on devices due to large surface to volume ratio. Here, we report on highly stable and high-performance monolayer and bilayer MoS sub(2) photodetectors encapsulated with atomic layer deposited hafnium oxide. The protected devices show enhanced electronic properties by isolating them from the ambience as strong n-type doping, vanishing hysteresis, and reduced device resistance. By controlling the gate voltage the responsivity and temporal response can be tuned by several orders of magnitude with R similar to 10-10 super(4) A/W and t similar to 10 ms to 10 s. At strong negative gate voltage, the detector is operated at higher speed and simultaneously exhibits a low-bound, record sensitivity of D* greater than or equal to 7.7 10 super(11) Jones. Our results lead the way for future application of ultrathin, flexible, and high-performance MoS sub(2) detectors and prompt for further investigation in encapsulated transition metal dichalcogenide optoelectronics. Keywords: Molybdenum disulfide; HfO sub(2); TMDC; encapsulation; photodetectors
language: eng
source:
identifier: E-ISSN: 1530-6992 ; DOI: 1530-6992 ; DOI: 10.1021/acs.nanolett.5b02559
fulltext: no_fulltext
issn:
  • 15306992
  • 1530-6992
url: Link


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titleHighly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed.
creatorKufer, Dominik ; Konstantatos, Gerasimos
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subjectHfo2 ; Molybdenum Disulfide ; Tmdc ; Encapsulation ; Photodetectors
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descriptionSemiconducting, two-dimensional molybdenum disulfide (MoS sub(2)) is considered a promising new material for highly sensitive photodetection, because of its atomically thin profile and favorable bandgap. However, reported photodetectors to date show strong variation in performance due to the detrimental and uncontrollable effects of environmental adsorbates on devices due to large surface to volume ratio. Here, we report on highly stable and high-performance monolayer and bilayer MoS sub(2) photodetectors encapsulated with atomic layer deposited hafnium oxide. The protected devices show enhanced electronic properties by isolating them from the ambience as strong n-type doping, vanishing hysteresis, and reduced device resistance. By controlling the gate voltage the responsivity and temporal response can be tuned by several orders of magnitude with R similar to 10-10 super(4) A/W and t similar to 10 ms to 10 s. At strong negative gate voltage, the detector is operated at higher speed and simultaneously exhibits a low-bound, record sensitivity of D* greater than or equal to 7.7 10 super(11) Jones. Our results lead the way for future application of ultrathin, flexible, and high-performance MoS sub(2) detectors and prompt for further investigation in encapsulated transition metal dichalcogenide optoelectronics. Keywords: Molybdenum disulfide; HfO sub(2); TMDC; encapsulation; photodetectors
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