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Large Excitonic Reflectivity of Monolayer MoSe_{2} Encapsulated in Hexagonal Boron Nitride.

We demonstrate that a single layer of MoSe_{2} encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence p... Full description

Journal Title: Physical review letters January 19, 2018, Vol.120(3), p.037402
Main Author: Scuri, Giovanni
Other Authors: Zhou, You , High, Alexander A , Wild, Dominik S , Shu, Chi , De Greve, Kristiaan , Jauregui, Luis A , Taniguchi, Takashi , Watanabe, Kenji , Kim, Philip , Lukin, Mikhail D , Park, Hongkun
Format: Electronic Article Electronic Article
Language: English
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ID: E-ISSN: 1079-7114 ; DOI: 1079-7114 ; DOI: 10.1103/PhysRevLett.120.037402
Link: http://search.proquest.com/docview/1994362782/?pq-origsite=primo
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recordid: proquest1994362782
title: Large Excitonic Reflectivity of Monolayer MoSe_{2} Encapsulated in Hexagonal Boron Nitride.
format: Article
creator:
  • Scuri, Giovanni
  • Zhou, You
  • High, Alexander A
  • Wild, Dominik S
  • Shu, Chi
  • De Greve, Kristiaan
  • Jauregui, Luis A
  • Taniguchi, Takashi
  • Watanabe, Kenji
  • Kim, Philip
  • Lukin, Mikhail D
  • Park, Hongkun
subjects:
  • Physics
ispartof: Physical review letters, January 19, 2018, Vol.120(3), p.037402
description: We demonstrate that a single layer of MoSe_{2} encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor. We show that the MoSe_{2} monolayer exhibits power-and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used.
language: eng
source:
identifier: E-ISSN: 1079-7114 ; DOI: 1079-7114 ; DOI: 10.1103/PhysRevLett.120.037402
fulltext: fulltext
issn:
  • 10797114
  • 1079-7114
url: Link


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titleLarge Excitonic Reflectivity of Monolayer MoSe_{2} Encapsulated in Hexagonal Boron Nitride.
creatorScuri, Giovanni ; Zhou, You ; High, Alexander A ; Wild, Dominik S ; Shu, Chi ; De Greve, Kristiaan ; Jauregui, Luis A ; Taniguchi, Takashi ; Watanabe, Kenji ; Kim, Philip ; Lukin, Mikhail D ; Park, Hongkun
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descriptionWe demonstrate that a single layer of MoSe_{2} encapsulated by hexagonal boron nitride can act as an electrically switchable mirror at cryogenic temperatures, reflecting up to 85% of incident light at the excitonic resonance. This high reflectance is a direct consequence of the excellent coherence properties of excitons in this atomically thin semiconductor. We show that the MoSe_{2} monolayer exhibits power-and wavelength-dependent nonlinearities that stem from exciton-based lattice heating in the case of continuous-wave excitation and exciton-exciton interactions when fast, pulsed laser excitation is used.
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