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Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering.

Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the obs... Full description

Journal Title: Analytical chemistry July 3, 2018, Vol.90(13), pp.8123-8129
Main Author: Yogi, Priyanka
Other Authors: Tanwar, Manushree , Saxena, Shailendra K , Mishra, Suryakant , Pathak, Devesh K , Chaudhary, Anjali , Sagdeo, Pankaj R , Kumar, Rajesh
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1520-6882 ; DOI: 10.1021/acs.analchem.8b01352
Link: http://search.proquest.com/docview/2054941880/?pq-origsite=primo
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title: Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering.
format: Article
creator:
  • Yogi, Priyanka
  • Tanwar, Manushree
  • Saxena, Shailendra K
  • Mishra, Suryakant
  • Pathak, Devesh K
  • Chaudhary, Anjali
  • Sagdeo, Pankaj R
  • Kumar, Rajesh
subjects:
  • Silicon
  • Nanocrystals
  • Raman Spectra
  • Empirical Analysis
  • Amorphous Silicon
  • Confinement
  • Short Range Order
  • Shape Functions
  • Line Spectra
ispartof: Analytical chemistry, July 3, 2018, Vol.90(13), pp.8123-8129
description: Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term “confinement size” used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering. Additionally, an empirical formula has been proposed using bond polarizability model for estimating the short-range order making one capable to quantify the distance of short-range order by looking at the Raman peak position alone. Both the proposals have been validated using three different data sets reported by three different research groups from...
language: eng
source:
identifier: E-ISSN: 1520-6882 ; DOI: 10.1021/acs.analchem.8b01352
fulltext: fulltext
issn:
  • 15206882
  • 1520-6882
url: Link


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titleQuantifying the Short-Range Order in Amorphous Silicon by Raman Scattering.
creatorYogi, Priyanka ; Tanwar, Manushree ; Saxena, Shailendra K ; Mishra, Suryakant ; Pathak, Devesh K ; Chaudhary, Anjali ; Sagdeo, Pankaj R ; Kumar, Rajesh
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descriptionQuantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term “confinement size” used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering. Additionally, an empirical formula has been proposed using bond polarizability model for estimating the short-range order making one capable to quantify the distance of short-range order by looking at the Raman peak position alone. Both the proposals have been validated using three different data sets reported by three different research groups from...
subjectSilicon ; Nanocrystals ; Raman Spectra ; Empirical Analysis ; Amorphous Silicon ; Confinement ; Short Range Order ; Shape Functions ; Line Spectra;
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