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Imaging electron flow and quantum dot formation in MoS2 nanostructures

Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning pr... Full description

Journal Title: arXiv.org Jan 26, 2017
Main Author: Bhandari, Sagar
Other Authors: Wang, Ke , Watanabe, Kenji , Taniguchi, Takashi , Kim, Philip , Westervelt, Robert
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1088/1361-6528/aad79f
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recordid: proquest2074535159
title: Imaging electron flow and quantum dot formation in MoS2 nanostructures
format: Article
creator:
  • Bhandari, Sagar
  • Wang, Ke
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Kim, Philip
  • Westervelt, Robert
subjects:
  • Electrons
  • Quantum Dots
  • Carrier Mobility
  • Substrates
  • Scattering
  • Scanning Probe Microscopes
  • Resistance
  • Raster Scanning
  • Nanoelectronics
  • Electron Density
  • Images
  • Molybdenum Disulfide
  • Quantum Dots
  • Two Dimensional Materials
ispartof: arXiv.org, Jan 26, 2017
description: Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning probe microscope (SPM) to image the flow of electrons in a MoS2 Hall bar sample at 4.2 K. Capacitive coupling to the SPM tip changes the electron density below and scatters electrons flowing nearby; an image of flow can be obtained by measuring the change in resistance between two contacts as the tip is raster scanned across the sample. We present images of current flow through a large contact that decay exponentially away from the sample edge. In addition, the images show the characteristic "bullseye" pattern of Coulomb blockade conductance rings around a quantum dot as the density is depleted with a back gate. We estimate the size and position of these quantum dots using a capacitive model.
language: eng
source:
identifier: DOI: 10.1088/1361-6528/aad79f
fulltext: fulltext_linktorsrc
url: Link


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titleImaging electron flow and quantum dot formation in MoS2 nanostructures
creatorBhandari, Sagar ; Wang, Ke ; Watanabe, Kenji ; Taniguchi, Takashi ; Kim, Philip ; Westervelt, Robert
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ispartofarXiv.org, Jan 26, 2017
identifierDOI: 10.1088/1361-6528/aad79f
subjectElectrons ; Quantum Dots ; Carrier Mobility ; Substrates ; Scattering ; Scanning Probe Microscopes ; Resistance ; Raster Scanning ; Nanoelectronics ; Electron Density ; Images ; Molybdenum Disulfide ; Quantum Dots ; Two Dimensional Materials
descriptionAmong newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning probe microscope (SPM) to image the flow of electrons in a MoS2 Hall bar sample at 4.2 K. Capacitive coupling to the SPM tip changes the electron density below and scatters electrons flowing nearby; an image of flow can be obtained by measuring the change in resistance between two contacts as the tip is raster scanned across the sample. We present images of current flow through a large contact that decay exponentially away from the sample edge. In addition, the images show the characteristic "bullseye" pattern of Coulomb blockade conductance rings around a quantum dot as the density is depleted with a back gate. We estimate the size and position of these quantum dots using a capacitive model.
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titleImaging electron flow and quantum dot formation in MoS2 nanostructures
descriptionAmong newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning probe microscope (SPM) to image the flow of electrons in a MoS2 Hall bar sample at 4.2 K. Capacitive coupling to the SPM tip changes the electron density below and scatters electrons flowing nearby; an image of flow can be obtained by measuring the change in resistance between two contacts as the tip is raster scanned across the sample. We present images of current flow through a large contact that decay exponentially away from the sample edge. In addition, the images show the characteristic "bullseye" pattern of Coulomb blockade conductance rings around a quantum dot as the density is depleted with a back gate. We estimate the size and position of these quantum dots using a capacitive model.
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abstractAmong newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To probe the sources of scattering, we use a cooled scanning probe microscope (SPM) to image the flow of electrons in a MoS2 Hall bar sample at 4.2 K. Capacitive coupling to the SPM tip changes the electron density below and scatters electrons flowing nearby; an image of flow can be obtained by measuring the change in resistance between two contacts as the tip is raster scanned across the sample. We present images of current flow through a large contact that decay exponentially away from the sample edge. In addition, the images show the characteristic "bullseye" pattern of Coulomb blockade conductance rings around a quantum dot as the density is depleted with a back gate. We estimate the size and position of these quantum dots using a capacitive model.
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