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# Giant valley-isospin conductance oscillations in ballistic graphene

At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and... Full description

 Journal Title: arXiv.org Aug 31, 2017 Main Author: Handschin, Clevin Other Authors: Makk, Péter , Rickhaus, Peter , Maurand, Romain , Watanabe, Kenji , Taniguchi, Takashi , Richter, Klaus , Ming-Hao, Liu , Schönenberger, Christian Format: Electronic Article Language: English Subjects: ID: DOI: 10.1021/acs.nanolett.7b01964 Zum Text:
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 recordid: proquest2076453213 title: Giant valley-isospin conductance oscillations in ballistic graphene format: Article creator: Handschin, Clevin Makk, Péter Rickhaus, Peter Maurand, Romain Watanabe, Kenji Taniguchi, Takashi Richter, Klaus Ming-Hao, Liu Schönenberger, Christian subjects: Channels Quantum Hall Effect Graphene Oscillations Flakes Resistance ispartof: arXiv.org, Aug 31, 2017 description: At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations. language: eng source: identifier: DOI: 10.1021/acs.nanolett.7b01964 fulltext: fulltext_linktorsrc url: Link

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titleGiant valley-isospin conductance oscillations in ballistic graphene
creatorHandschin, Clevin ; Makk, Péter ; Rickhaus, Peter ; Maurand, Romain ; Watanabe, Kenji ; Taniguchi, Takashi ; Richter, Klaus ; Ming-Hao, Liu ; Schönenberger, Christian
contributorSchönenberger, Christian (pacrepositoryorg)
ispartofarXiv.org, Aug 31, 2017
identifierDOI: 10.1021/acs.nanolett.7b01964
subjectChannels ; Quantum Hall Effect ; Graphene ; Oscillations ; Flakes ; Resistance
descriptionAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
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 0 Handschin, Clevin 1 Makk, Péter 2 Rickhaus, Peter 3 Maurand, Romain 4 Watanabe, Kenji 5 Taniguchi, Takashi 6 Richter, Klaus 7 Ming-Hao, Liu 8 Schönenberger, Christian
titleGiant valley-isospin conductance oscillations in ballistic graphene
descriptionAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
subject
 0 Channels 1 Quantum Hall Effect 2 Graphene 3 Oscillations 4 Flakes 5 Resistance
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 title Giant valley-isospin conductance oscillations in ballistic graphene author Handschin, Clevin ; Makk, Péter ; Rickhaus, Peter ; Maurand, Romain ; Watanabe, Kenji ; Taniguchi, Takashi ; Richter, Klaus ; Ming-Hao, Liu ; Schönenberger, Christian creationdate 20170831 lso01 20170831
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 0 Handschin, Clevin 1 Makk, Péter 2 Rickhaus, Peter 3 Maurand, Romain 4 Watanabe, Kenji 5 Taniguchi, Takashi 6 Richter, Klaus 7 Ming-Hao, Liu 8 Schönenberger, Christian
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abstractAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
copIthaca
pubCornell University Library, arXiv.org
doi10.1021/acs.nanolett.7b01964
urlhttp://search.proquest.com/docview/2076453213/
orcidid0000-0001-7637-4672
volume17
pages5389-5393
issue9
eissn15306992
issn15306984