schliessen

Filtern

 

Bibliotheken

Giant valley-isospin conductance oscillations in ballistic graphene

At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and... Full description

Journal Title: arXiv.org Aug 31, 2017
Main Author: Handschin, Clevin
Other Authors: Makk, Péter , Rickhaus, Peter , Maurand, Romain , Watanabe, Kenji , Taniguchi, Takashi , Richter, Klaus , Ming-Hao, Liu , Schönenberger, Christian
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1021/acs.nanolett.7b01964
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: proquest2076453213
title: Giant valley-isospin conductance oscillations in ballistic graphene
format: Article
creator:
  • Handschin, Clevin
  • Makk, Péter
  • Rickhaus, Peter
  • Maurand, Romain
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Richter, Klaus
  • Ming-Hao, Liu
  • Schönenberger, Christian
subjects:
  • Channels
  • Quantum Hall Effect
  • Graphene
  • Oscillations
  • Flakes
  • Resistance
ispartof: arXiv.org, Aug 31, 2017
description: At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
language: eng
source:
identifier: DOI: 10.1021/acs.nanolett.7b01964
fulltext: fulltext_linktorsrc
url: Link


@attributes
ID1003560662
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid2076453213
sourceidproquest
recordidTN_proquest2076453213
sourcesystemOther
pqid2076453213
display
typearticle
titleGiant valley-isospin conductance oscillations in ballistic graphene
creatorHandschin, Clevin ; Makk, Péter ; Rickhaus, Peter ; Maurand, Romain ; Watanabe, Kenji ; Taniguchi, Takashi ; Richter, Klaus ; Ming-Hao, Liu ; Schönenberger, Christian
contributorSchönenberger, Christian (pacrepositoryorg)
ispartofarXiv.org, Aug 31, 2017
identifierDOI: 10.1021/acs.nanolett.7b01964
subjectChannels ; Quantum Hall Effect ; Graphene ; Oscillations ; Flakes ; Resistance
descriptionAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
languageeng
source
version5
oafree_for_read
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
linktorsrc$$Uhttp://search.proquest.com/docview/2076453213/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
0Handschin, Clevin
1Makk, Péter
2Rickhaus, Peter
3Maurand, Romain
4Watanabe, Kenji
5Taniguchi, Takashi
6Richter, Klaus
7Ming-Hao, Liu
8Schönenberger, Christian
titleGiant valley-isospin conductance oscillations in ballistic graphene
descriptionAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
subject
0Channels
1Quantum Hall Effect
2Graphene
3Oscillations
4Flakes
5Resistance
general
0English
1Cornell University Library, arXiv.org
210.1021/acs.nanolett.7b01964
3Engineering Database
4Publicly Available Content Database
5ProQuest Engineering Collection
6ProQuest Technology Collection
7ProQuest SciTech Collection
8Materials Science & Engineering Database
9ProQuest Central (new)
10ProQuest Central Korea
11SciTech Premium Collection
12Technology Collection
13ProQuest Central Essentials
14Engineering Collection (ProQuest)
sourceidproquest
recordidproquest2076453213
rsrctypearticle
creationdate2017
addtitlearXiv.org
searchscope
01007853
11008875
21008886
31009127
41009240
510000041
610000053
710000120
810000250
910000255
1010000256
1110000258
1210000260
1310000265
1410000268
1510000281
1610000348
1710000356
1810000360
19proquest
scope
01007853
11008875
21008886
31009127
41009240
510000041
610000053
710000120
810000250
910000255
1010000256
1110000258
1210000260
1310000265
1410000268
1510000281
1610000348
1710000356
1810000360
19proquest
lsr43
01007853true
11008875true
21008886true
31009127true
41009240true
510000041true
610000053true
710000120true
810000250true
910000255true
1010000256true
1110000258true
1210000260true
1310000265true
1410000268true
1510000281true
1610000348true
1710000356true
1810000360true
startdate20170831
enddate20170831
lsr30VSR-Enriched:[orcidid, vol, pages, eissn, issn, pqid, issue]
sort
titleGiant valley-isospin conductance oscillations in ballistic graphene
authorHandschin, Clevin ; Makk, Péter ; Rickhaus, Peter ; Maurand, Romain ; Watanabe, Kenji ; Taniguchi, Takashi ; Richter, Klaus ; Ming-Hao, Liu ; Schönenberger, Christian
creationdate20170831
lso0120170831
facets
frbrgroupid-5788176788611855559
frbrtype5
newrecords20180917
languageeng
creationdate2017
topic
0Channels
1Quantum Hall Effect
2Graphene
3Oscillations
4Flakes
5Resistance
collection
0Engineering Database
1Publicly Available Content Database
2ProQuest Engineering Collection
3ProQuest Technology Collection
4ProQuest SciTech Collection
5Materials Science & Engineering Database
6ProQuest Central (new)
7ProQuest Central Korea
8SciTech Premium Collection
9Technology Collection
10ProQuest Central Essentials
11Engineering Collection (ProQuest)
prefilterarticles
rsrctypearticles
creatorcontrib
0Handschin, Clevin
1Makk, Péter
2Rickhaus, Peter
3Maurand, Romain
4Watanabe, Kenji
5Taniguchi, Takashi
6Richter, Klaus
7Ming-Hao, Liu
8Schönenberger, Christian
jtitlearXiv.org
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext_linktorsrc
addata
aulast
0Handschin
1Makk
2Rickhaus
3Maurand
4Watanabe
5Taniguchi
6Richter
7Ming-Hao
8Schönenberger
aufirst
0Clevin
1Péter
2Peter
3Romain
4Kenji
5Takashi
6Klaus
7Liu
8Christian
au
0Handschin, Clevin
1Makk, Péter
2Rickhaus, Peter
3Maurand, Romain
4Watanabe, Kenji
5Taniguchi, Takashi
6Richter, Klaus
7Ming-Hao, Liu
8Schönenberger, Christian
atitleGiant valley-isospin conductance oscillations in ballistic graphene
jtitlearXiv.org
risdate20170831
formatjournal
genrearticle
ristypeJOUR
abstractAt high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzid\l{}o and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations.
copIthaca
pubCornell University Library, arXiv.org
doi10.1021/acs.nanolett.7b01964
urlhttp://search.proquest.com/docview/2076453213/
orcidid0000-0001-7637-4672
volume17
pages5389-5393
issue9
eissn15306992
issn15306984
oafree_for_read
date2017-08-31