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High Current Density 2D/3D Esaki Tunnel Diodes

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS... Full description

Journal Title: arXiv.org Jun 2, 2016
Main Author: Krishnamoorthy, Sriram
Other Authors: Lee, Edwin , Lee, Choong , Zhang, Yuewei , Mcculloch, William , Johnson, Jared , Hwang, Jinwoo , Wu, Yiying , Rajan, Siddharth
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1063/1.4966283
Zum Text:
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recordid: proquest2080615522
title: High Current Density 2D/3D Esaki Tunnel Diodes
format: Article
creator:
  • Krishnamoorthy, Sriram
  • Lee, Edwin
  • Lee, Choong
  • Zhang, Yuewei
  • Mcculloch, William
  • Johnson, Jared
  • Hwang, Jinwoo
  • Wu, Yiying
  • Rajan, Siddharth
subjects:
  • Diodes
  • Bias
  • High Current
  • Gallium Nitrides
  • Lattice Matching
  • Molybdenum Disulfide
  • Tunnel Junctions
  • Tunnel Diodes
  • Current Density
  • Two Dimensional Materials
  • Electrostatics
  • Organic Light Emitting Diodes
  • Heterojunctions
  • Niobium
  • Transition Metal Compounds
  • Instrumentation and Detectors
  • Mesoscale and Nanoscale Physics
ispartof: arXiv.org, Jun 2, 2016
description: The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
language: eng
source:
identifier: DOI: 10.1063/1.4966283
fulltext: fulltext_linktorsrc
url: Link


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titleHigh Current Density 2D/3D Esaki Tunnel Diodes
creatorKrishnamoorthy, Sriram ; Lee, Edwin ; Lee, Choong ; Zhang, Yuewei ; Mcculloch, William ; Johnson, Jared ; Hwang, Jinwoo ; Wu, Yiying ; Rajan, Siddharth
contributorRajan, Siddharth (pacrepositoryorg)
ispartofarXiv.org, Jun 2, 2016
identifierDOI: 10.1063/1.4966283
subjectDiodes ; Bias ; High Current ; Gallium Nitrides ; Lattice Matching ; Molybdenum Disulfide ; Tunnel Junctions ; Tunnel Diodes ; Current Density ; Two Dimensional Materials ; Electrostatics ; Organic Light Emitting Diodes ; Heterojunctions ; Niobium ; Transition Metal Compounds ; Instrumentation and Detectors ; Mesoscale and Nanoscale Physics
descriptionThe integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
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titleHigh Current Density 2D/3D Esaki Tunnel Diodes
descriptionThe integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
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titleHigh Current Density 2D/3D Esaki Tunnel Diodes
authorKrishnamoorthy, Sriram ; Lee, Edwin ; Lee, Choong ; Zhang, Yuewei ; Mcculloch, William ; Johnson, Jared ; Hwang, Jinwoo ; Wu, Yiying ; Rajan, Siddharth
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abstractThe integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
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pubCornell University Library, arXiv.org
doi10.1063/1.4966283
urlhttp://search.proquest.com/docview/2080615522/
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orcidid0000-0002-4682-1002
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eissn10773118
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date2016-06-02