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Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus fiel... Full description

Journal Title: arXiv.org Dec 3, 2014
Main Author: Avsar, Ahmet
Other Authors: Vera-Marun, Ivan , Tan, Jun , Watanabe, Kenji , Taniguchi, Takashi , Castro Neto, Antonio , Ozyilmaz, Barbaros
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1021/acsnano.5b00289
Zum Text:
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recordid: proquest2081701390
title: Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
format: Article
creator:
  • Avsar, Ahmet
  • Vera-Marun, Ivan
  • Tan, Jun
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Castro Neto, Antonio
  • Ozyilmaz, Barbaros
subjects:
  • Phosphorus
  • Phosphorus
  • High Vacuum
  • Encapsulation
  • Organic Chemistry
  • Graphene
  • Transport Properties
  • Field Effect Transistors
  • Electronic Devices
  • Heterostructures
  • Electric Contacts
  • Electrical Properties
  • Electrodes
  • Semiconductor Devices
  • Boron Nitride
  • Bilayers
  • Dimensional Stability
  • Thermionic Emission
  • Computer Architecture
ispartof: arXiv.org, Dec 3, 2014
description: The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field...
language: eng
source:
identifier: DOI: 10.1021/acsnano.5b00289
fulltext: fulltext_linktorsrc
url: Link


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titleElectrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
creatorAvsar, Ahmet ; Vera-Marun, Ivan ; Tan, Jun ; Watanabe, Kenji ; Taniguchi, Takashi ; Castro Neto, Antonio ; Ozyilmaz, Barbaros
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ispartofarXiv.org, Dec 3, 2014
identifierDOI: 10.1021/acsnano.5b00289
subjectPhosphorus ; Phosphorus ; High Vacuum ; Encapsulation ; Organic Chemistry ; Graphene ; Transport Properties ; Field Effect Transistors ; Electronic Devices ; Heterostructures ; Electric Contacts ; Electrical Properties ; Electrodes ; Semiconductor Devices ; Boron Nitride ; Bilayers ; Dimensional Stability ; Thermionic Emission ; Computer Architecture
descriptionThe presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field...
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titleElectrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
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titleElectrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
authorAvsar, Ahmet ; Vera-Marun, Ivan ; Tan, Jun ; Watanabe, Kenji ; Taniguchi, Takashi ; Castro Neto, Antonio ; Ozyilmaz, Barbaros
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abstractThe presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field...
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pubCornell University Library, arXiv.org
doi10.1021/acsnano.5b00289
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date2014-12-03