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Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devi... Full description

Journal Title: arXiv.org May 24, 2014
Main Author: Kretinin, A
Other Authors: Cao, Y , Tu, J , Yu, G , Jalil, R , Novoselov, K , Haigh, S , Gholinia, A , Mishchenko, A , Lozada, M , Georgiou, T , Woods, C , Withers, F , Blake, P , Eda, G , Wirsig, A , Hucho, C , Watanabe, K , Taniguchi, T , Geim, A , Gorbachev, R
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1021/nl5006542
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title: Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
format: Article
creator:
  • Kretinin, A
  • Cao, Y
  • Tu, J
  • Yu, G
  • Jalil, R
  • Novoselov, K
  • Haigh, S
  • Gholinia, A
  • Mishchenko, A
  • Lozada, M
  • Georgiou, T
  • Woods, C
  • Withers, F
  • Blake, P
  • Eda, G
  • Wirsig, A
  • Hucho, C
  • Watanabe, K
  • Taniguchi, T
  • Geim, A
  • Gorbachev, R
subjects:
  • Encapsulation
  • Graphene
  • Bismuth Strontium Calcium Copper Oxide
  • Substrates
  • Heterostructures
  • Copper Oxides
  • Tungsten Disulfide
  • Strontium Oxides
  • Vanadium Pentoxide
  • Graphical User Interface
  • Transition Metals
  • Lime
  • Boron Nitride
  • Crystals
  • Mesoscale and Nanoscale Physics
  • Materials Science
ispartof: arXiv.org, May 24, 2014
description: Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm\(^{2}\) V\(^{-1}\)s\(^{-1}\). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
language: eng
source:
identifier: DOI: 10.1021/nl5006542
fulltext: fulltext_linktorsrc
url: Link


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titleElectronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
creatorKretinin, A ; Cao, Y ; Tu, J ; Yu, G ; Jalil, R ; Novoselov, K ; Haigh, S ; Gholinia, A ; Mishchenko, A ; Lozada, M ; Georgiou, T ; Woods, C ; Withers, F ; Blake, P ; Eda, G ; Wirsig, A ; Hucho, C ; Watanabe, K ; Taniguchi, T ; Geim, A ; Gorbachev, R
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ispartofarXiv.org, May 24, 2014
identifierDOI: 10.1021/nl5006542
subjectEncapsulation ; Graphene ; Bismuth Strontium Calcium Copper Oxide ; Substrates ; Heterostructures ; Copper Oxides ; Tungsten Disulfide ; Strontium Oxides ; Vanadium Pentoxide ; Graphical User Interface ; Transition Metals ; Lime ; Boron Nitride ; Crystals ; Mesoscale and Nanoscale Physics ; Materials Science
descriptionHexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm\(^{2}\) V\(^{-1}\)s\(^{-1}\). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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descriptionHexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm\(^{2}\) V\(^{-1}\)s\(^{-1}\). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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authorKretinin, A ; Cao, Y ; Tu, J ; Yu, G ; Jalil, R ; Novoselov, K ; Haigh, S ; Gholinia, A ; Mishchenko, A ; Lozada, M ; Georgiou, T ; Woods, C ; Withers, F ; Blake, P ; Eda, G ; Wirsig, A ; Hucho, C ; Watanabe, K ; Taniguchi, T ; Geim, A ; Gorbachev, R
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abstractHexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm\(^{2}\) V\(^{-1}\)s\(^{-1}\). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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date2014-05-24