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Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation make... Full description

Journal Title: arXiv.org Jun 10, 2011
Main Author: Mayorov, A
Other Authors: Gorbachev, R , Morozov, S , Britnell, L , Jalil, R , Ponomarenko, L , Blake, P , Novoselov, K , Watanabe, K , Taniguchi, T , Geim, A
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1021/nl200758b
Zum Text:
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recordid: proquest2086758088
title: Micrometer-scale ballistic transport in encapsulated graphene at room temperature
format: Article
creator:
  • Mayorov, A
  • Gorbachev, R
  • Morozov, S
  • Britnell, L
  • Jalil, R
  • Ponomarenko, L
  • Blake, P
  • Novoselov, K
  • Watanabe, K
  • Taniguchi, T
  • Geim, A
subjects:
  • Transport
  • Hall Effect
  • Encapsulation
  • Graphene
  • Boron Nitride
  • Carrier Density
  • Materials Science
  • Mesoscale and Nanoscale Physics
ispartof: arXiv.org, Jun 10, 2011
description: Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
language: eng
source:
identifier: DOI: 10.1021/nl200758b
fulltext: fulltext_linktorsrc
url: Link


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titleMicrometer-scale ballistic transport in encapsulated graphene at room temperature
creatorMayorov, A ; Gorbachev, R ; Morozov, S ; Britnell, L ; Jalil, R ; Ponomarenko, L ; Blake, P ; Novoselov, K ; Watanabe, K ; Taniguchi, T ; Geim, A
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ispartofarXiv.org, Jun 10, 2011
identifierDOI: 10.1021/nl200758b
subjectTransport ; Hall Effect ; Encapsulation ; Graphene ; Boron Nitride ; Carrier Density ; Materials Science ; Mesoscale and Nanoscale Physics
descriptionDevices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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titleMicrometer-scale ballistic transport in encapsulated graphene at room temperature
descriptionDevices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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abstractDevices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.
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pubCornell University Library, arXiv.org
doi10.1021/nl200758b
urlhttp://search.proquest.com/docview/2086758088/
issue6
volume11
pages2396-2399
eissn15306992
issn15306984
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date2011-06-10