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Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device

In this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in the insulating polymethylmethacrylate (PMMA) were reported with the device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The device exhibits the reversible switchi... Full description

Journal Title: Applied Physics Letters Feb 27, 2017, Vol.110(9)
Main Author: Li, Yan
Other Authors: Zhang, Yong
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118
Link: http://search.proquest.com/docview/2124553881/?pq-origsite=primo
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recordid: proquest2124553881
title: Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device
format: Article
creator:
  • Li, Yan
  • Zhang, Yong
subjects:
  • Trapping
  • Carrier Transport
  • Resistance
  • Switching
  • Endurance
  • Memory Devices
  • Molybdenum Disulfide
  • Data Storage
  • Fluorine
  • Quantum Dots
  • Quantum Tunnelling
  • Ohmic
  • Quantum Dots
  • Polymethyl Methacrylate
ispartof: Applied Physics Letters, Feb 27, 2017, Vol.110(9)
description: In this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in the insulating polymethylmethacrylate (PMMA) were reported with the device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The device exhibits the reversible switching performances with the excellent read endurance and data retention capability. The related carrier transport behaviors were predominated by Schottky emission and Ohmic conductions in OFF and ON states, respectively. Importantly, a conductance quantization effect was evidently observed in this MoS2 QD-based memory device. Combined with the energy band evolution, these phenomena were elucidated in views of electrons trapping/de-trapping and quantum tunneling effects of nanoscale MoS2 QDs. This work also suggests the potential application of MoS2 QDs in next generation ultra-high-density data storage.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118
fulltext: fulltext
issn:
  • 00036951
  • 0003-6951
  • 10773118
  • 1077-3118
url: Link


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ispartofApplied Physics Letters, Feb 27, 2017, Vol.110(9)
identifierISSN: 0003-6951 ; E-ISSN: 1077-3118
subjectTrapping ; Carrier Transport ; Resistance ; Switching ; Endurance ; Memory Devices ; Molybdenum Disulfide ; Data Storage ; Fluorine ; Quantum Dots ; Quantum Tunnelling ; Ohmic ; Quantum Dots ; Polymethyl Methacrylate
descriptionIn this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in the insulating polymethylmethacrylate (PMMA) were reported with the device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The device exhibits the reversible switching performances with the excellent read endurance and data retention capability. The related carrier transport behaviors were predominated by Schottky emission and Ohmic conductions in OFF and ON states, respectively. Importantly, a conductance quantization effect was evidently observed in this MoS2 QD-based memory device. Combined with the energy band evolution, these phenomena were elucidated in views of electrons trapping/de-trapping and quantum tunneling effects of nanoscale MoS2 QDs. This work also suggests the potential application of MoS2 QDs in next generation ultra-high-density data storage.
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abstractIn this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in the insulating polymethylmethacrylate (PMMA) were reported with the device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The device exhibits the reversible switching performances with the excellent read endurance and data retention capability. The related carrier transport behaviors were predominated by Schottky emission and Ohmic conductions in OFF and ON states, respectively. Importantly, a conductance quantization effect was evidently observed in this MoS2 QD-based memory device. Combined with the energy band evolution, these phenomena were elucidated in views of electrons trapping/de-trapping and quantum tunneling effects of nanoscale MoS2 QDs. This work also suggests the potential application of MoS2 QDs in next generation ultra-high-density data storage.
copMelville
pubAmerican Institute of Physics
urlhttp://search.proquest.com/docview/2124553881/
doi10.1063/1.4977488
date2017-02-27