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Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.

The threshold voltages at the onset of conduction for electron and hole branches can provide information on band gap values or interface states in a gap. We measured conductivity of bilayer graphene encapsulated by hexagonal boron nitride as a function of back and top gates, where another bilayer gr... Full description

Journal Title: ACS applied materials & interfaces December 5, 2018, Vol.10(48), pp.40985-40989
Main Author: Lee, Kayoung
Other Authors: Liu, En-Shao , Watanabe, Kenji , Taniguchi, Takashi , Nah, Junghyo
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 1944-8252 ; DOI: 1944-8252 ; DOI: 10.1021/acsami.8b16625
Link: http://search.proquest.com/docview/2133826120/?pq-origsite=primo
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recordid: proquest2133826120
title: Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.
format: Article
creator:
  • Lee, Kayoung
  • Liu, En-Shao
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Nah, Junghyo
subjects:
  • Band Gap
  • Bilayer Graphene
  • Hexagonal Boron Nitride
  • Interface States
  • Transport Gap
ispartof: ACS applied materials & interfaces, December 5, 2018, Vol.10(48), pp.40985-40989
description: The threshold voltages at the onset of conduction for electron and hole branches can provide information on band gap values or interface states in a gap. We measured conductivity of bilayer graphene encapsulated by hexagonal boron nitride as a function of back and top gates, where another bilayer graphene is used as a top gate. From the measured conductivity the transport gap values were extracted assuming zero interface trap states, and they are close to the theoretically expected gap values. From a little discrepancy an average density of interface states per energy within a band gap ( D) is also estimated. The data clearly show that D decreases as a bilayer graphene band gap increases rather than being constant. Despite the decreasing trend of D, interestingly the total interface states within a gap increases linearly as a band gap increases. This is because of ∼2 × 10 cm interface states localized at band edges even without a band gap, and other gap states are equally spread over the gap.
language: eng
source:
identifier: E-ISSN: 1944-8252 ; DOI: 1944-8252 ; DOI: 10.1021/acsami.8b16625
fulltext: no_fulltext
issn:
  • 19448252
  • 1944-8252
url: Link


@attributes
ID1459148538
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid2133826120
sourceidproquest
recordidTN_proquest2133826120
sourcesystemOther
pqid2133826120
display
typearticle
titleInterface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.
creatorLee, Kayoung ; Liu, En-Shao ; Watanabe, Kenji ; Taniguchi, Takashi ; Nah, Junghyo
contributorLee, Kayoung (correspondence author) ; Lee, Kayoung (record owner)
ispartofACS applied materials & interfaces, December 5, 2018, Vol.10(48), pp.40985-40989
identifier
subjectBand Gap ; Bilayer Graphene ; Hexagonal Boron Nitride ; Interface States ; Transport Gap
languageeng
source
descriptionThe threshold voltages at the onset of conduction for electron and hole branches can provide information on band gap values or interface states in a gap. We measured conductivity of bilayer graphene encapsulated by hexagonal boron nitride as a function of back and top gates, where another bilayer graphene is used as a top gate. From the measured conductivity the transport gap values were extracted assuming zero interface trap states, and they are close to the theoretically expected gap values. From a little discrepancy an average density of interface states per energy within a band gap ( D) is also estimated. The data clearly show that D decreases as a bilayer graphene band gap increases rather than being constant. Despite the decreasing trend of D, interestingly the total interface states within a gap increases linearly as a band gap increases. This is because of ∼2 × 10 cm interface states localized at band edges even without a band gap, and other gap states are equally spread over the gap.
version3
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
backlink$$Uhttp://search.proquest.com/docview/2133826120/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
0Lee, Kayoung
1Liu, En-Shao
2Watanabe, Kenji
3Taniguchi, Takashi
4Nah, Junghyo
titleInterface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.
subject
0Band Gap
1Bilayer Graphene
2Hexagonal Boron Nitride
3Interface States
4Transport Gap
5band gap
6bilayer graphene
7hexagonal boron nitride
8interface states
9transport gap
general
0English
11944-8252
210.1021/acsami.8b16625
3MEDLINE (ProQuest)
4ProQuest Biological Science Collection
5ProQuest Natural Science Collection
6ProQuest SciTech Collection
7Biological Science Database
8Natural Science Collection
9SciTech Premium Collection
10Health Research Premium Collection
11Health Research Premium Collection (Alumni edition)
12Biological Science Index (ProQuest)
sourceidproquest
recordidproquest2133826120
issn
019448252
11944-8252
rsrctypearticle
creationdate2018
addtitleACS applied materials & interfaces
searchscope
01007527
11007944
210000004
310000038
410000050
510000120
610000159
710000238
810000253
910000260
1010000270
1110000271
1210000302
1310000350
14proquest
scope
01007527
11007944
210000004
310000038
410000050
510000120
610000159
710000238
810000253
910000260
1010000270
1110000271
1210000302
1310000350
14proquest
lsr43
01007527false
11007944false
210000004false
310000038false
410000050false
510000120false
610000159false
710000238false
810000253false
910000260false
1010000270false
1110000271false
1210000302false
1310000350false
contributorLee, Kayoung
startdate20181205
enddate20181205
citationpf 40985 pt 40989 vol 10 issue 48
lsr30VSR-Enriched:[issn, pqid, orcidid, description]
sort
titleInterface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.
authorLee, Kayoung ; Liu, En-Shao ; Watanabe, Kenji ; Taniguchi, Takashi ; Nah, Junghyo
creationdate20181205
lso0120181205
facets
frbrgroupid3502719822190583731
frbrtype5
newrecords20181218
languageeng
creationdate2018
topic
0Band Gap
1Bilayer Graphene
2Hexagonal Boron Nitride
3Interface States
4Transport Gap
collection
0MEDLINE (ProQuest)
1ProQuest Biological Science Collection
2ProQuest Natural Science Collection
3ProQuest SciTech Collection
4Biological Science Database
5Natural Science Collection
6SciTech Premium Collection
7Health Research Premium Collection
8Health Research Premium Collection (Alumni edition)
9Biological Science Index (ProQuest)
prefilterarticles
rsrctypearticles
creatorcontrib
0Lee, Kayoung
1Liu, En-Shao
2Watanabe, Kenji
3Taniguchi, Takashi
4Nah, Junghyo
jtitleACS applied materials & interfaces
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextno_fulltext
addata
aulast
0Lee
1Liu
2Watanabe
3Taniguchi
4Nah
aufirst
0Kayoung
1En-Shao
2Kenji
3Takashi
4Junghyo
au
0Lee, Kayoung
1Liu, En-Shao
2Watanabe, Kenji
3Taniguchi, Takashi
4Nah, Junghyo
addauLee, Kayoung
atitleInterface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride.
jtitleACS applied materials & interfaces
risdate20181205
volume10
issue48
spage40985
epage40989
pages40985-40989
eissn1944-8252
formatjournal
genrearticle
ristypeJOUR
doi10.1021/acsami.8b16625
urlhttp://search.proquest.com/docview/2133826120/
orcidid0000-0001-6883-8908
issn19448244
date2018-12-05