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High quality electrostatically defined hall bars in monolayer graphene

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the s... Full description

Journal Title: arXiv.org Jan 22, 2019
Main Author: Ribeiro-Palau, Rebeca
Other Authors: Chen, Shaowen , Zeng, Yihang , Watanabe, Kenji , Taniguchi, Takashi , Hone, James , Dean, Cory
Format: Electronic Article Electronic Article
Language: English
Subjects:
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recordid: proquest2164931455
title: High quality electrostatically defined hall bars in monolayer graphene
format: Article
creator:
  • Ribeiro-Palau, Rebeca
  • Chen, Shaowen
  • Zeng, Yihang
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Hone, James
  • Dean, Cory
subjects:
  • Graphene
  • Electron Transport
  • Quantum Theory
  • Depletion
  • Carrier Density
  • Quality
ispartof: arXiv.org, Jan 22, 2019
description: Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the \(\nu=0\) insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
language: eng
source: © ProQuest LLC All rights reserved
identifier:
fulltext: fulltext_linktorsrc
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titleHigh quality electrostatically defined hall bars in monolayer graphene
creatorRibeiro-Palau, Rebeca ; Chen, Shaowen ; Zeng, Yihang ; Watanabe, Kenji ; Taniguchi, Takashi ; Hone, James ; Dean, Cory
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ispartofarXiv.org, Jan 22, 2019
subjectGraphene ; Electron Transport ; Quantum Theory ; Depletion ; Carrier Density ; Quality
descriptionRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the \(\nu=0\) insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
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titleHigh quality electrostatically defined hall bars in monolayer graphene
descriptionRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the \(\nu=0\) insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
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titleHigh quality electrostatically defined hall bars in monolayer graphene
authorRibeiro-Palau, Rebeca ; Chen, Shaowen ; Zeng, Yihang ; Watanabe, Kenji ; Taniguchi, Takashi ; Hone, James ; Dean, Cory
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abstractRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the \(\nu=0\) insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
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pubCornell University Library, arXiv.org
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date2019-01-22