• Help

•

# High quality electrostatically defined hall bars in monolayer graphene

Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the s... Full description

 Journal Title: arXiv.org Jan 22, 2019 Main Author: Ribeiro-Palau, Rebeca Other Authors: Chen, Shaowen , Zeng, Yihang , Watanabe, Kenji , Taniguchi, Takashi , Hone, James , Dean, Cory Format: Electronic Article Language: English Subjects: Quelle: © ProQuest LLC All rights reserved Zum Text:
Staff View
 recordid: proquest2164931455 title: High quality electrostatically defined hall bars in monolayer graphene format: Article creator: Ribeiro-Palau, Rebeca Chen, Shaowen Zeng, Yihang Watanabe, Kenji Taniguchi, Takashi Hone, James Dean, Cory subjects: Graphene Electron Transport Quantum Theory Depletion Carrier Density Quality ispartof: arXiv.org, Jan 22, 2019 description: Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the $$\nu=0$$ insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices. language: eng source: © ProQuest LLC All rights reserved identifier: fulltext: fulltext_linktorsrc url: Link

@attributes
 ID 897131512 RANK 0.07 NO 1 SEARCH_ENGINE primo_central_multiple_fe SEARCH_ENGINE_TYPE Primo Central Search Engine LOCAL false
PrimoNMBib
record
control
 sourcerecordid 2164931455 sourceid proquest recordid TN_proquest2164931455 sourcesystem Other pqid 2164931455
display
typearticle
titleHigh quality electrostatically defined hall bars in monolayer graphene
creatorRibeiro-Palau, Rebeca ; Chen, Shaowen ; Zeng, Yihang ; Watanabe, Kenji ; Taniguchi, Takashi ; Hone, James ; Dean, Cory
contributorDean, Cory (pacrepositoryorg)
ispartofarXiv.org, Jan 22, 2019
subjectGraphene ; Electron Transport ; Quantum Theory ; Depletion ; Carrier Density ; Quality
descriptionRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the $$\nu=0$$ insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
languageeng
source
 0 © ProQuest LLC All rights reserved 1 Engineering Database 2 Publicly Available Content Database 3 ProQuest Engineering Collection 4 ProQuest Technology Collection 5 ProQuest SciTech Collection 6 Materials Science & Engineering Database 7 ProQuest Central (new) 8 ProQuest Central Korea 9 SciTech Premium Collection 10 Technology Collection 11 ProQuest Central Essentials 12 Engineering Collection (ProQuest)
 openurl $$Topenurl_article openurlfulltext$$Topenurlfull_article linktorsrc $$Uhttp://search.proquest.com/docview/2164931455/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
 0 Ribeiro-Palau, Rebeca 1 Chen, Shaowen 2 Zeng, Yihang 3 Watanabe, Kenji 4 Taniguchi, Takashi 5 Hone, James 6 Dean, Cory
titleHigh quality electrostatically defined hall bars in monolayer graphene
descriptionRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the $$\nu=0$$ insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
subject
 0 Graphene 1 Electron Transport 2 Quantum Theory 3 Depletion 4 Carrier Density 5 Quality
general
 0 English 1 Cornell University Library, arXiv.org 2 Engineering Database 3 Publicly Available Content Database 4 ProQuest Engineering Collection 5 ProQuest Technology Collection 6 ProQuest SciTech Collection 7 Materials Science & Engineering Database 8 ProQuest Central (new) 9 ProQuest Central Korea 10 SciTech Premium Collection 11 Technology Collection 12 ProQuest Central Essentials 13 Engineering Collection (ProQuest)
sourceidproquest
recordidproquest2164931455
rsrctypearticle
creationdate2019
searchscope
 0 1007853 1 1008875 2 1008886 3 1009127 4 1009240 5 10000041 6 10000053 7 10000120 8 10000250 9 10000255 10 10000256 11 10000258 12 10000260 13 10000265 14 10000268 15 10000281 16 10000348 17 10000356 18 proquest
scope
 0 1007853 1 1008875 2 1008886 3 1009127 4 1009240 5 10000041 6 10000053 7 10000120 8 10000250 9 10000255 10 10000256 11 10000258 12 10000260 13 10000265 14 10000268 15 10000281 16 10000348 17 10000356 18 proquest
lsr43
 0 1007853true 1 1008875true 2 1008886true 3 1009127true 4 1009240true 5 10000041true 6 10000053true 7 10000120true 8 10000250true 9 10000255true 10 10000256true 11 10000258true 12 10000260true 13 10000265true 14 10000268true 15 10000281true 16 10000348true 17 10000356true
startdate20190122
enddate20190122
sort
 title High quality electrostatically defined hall bars in monolayer graphene author Ribeiro-Palau, Rebeca ; Chen, Shaowen ; Zeng, Yihang ; Watanabe, Kenji ; Taniguchi, Takashi ; Hone, James ; Dean, Cory creationdate 20190122 lso01 20190122
facets
frbrgroupid7124767416239782767
frbrtype6
newrecords20190110
languageeng
creationdate2019
topic
 0 Graphene 1 Electron Transport 2 Quantum Theory 3 Depletion 4 Carrier Density 5 Quality
collection
 0 Engineering Database 1 Publicly Available Content Database 2 ProQuest Engineering Collection 3 ProQuest Technology Collection 4 ProQuest SciTech Collection 5 Materials Science & Engineering Database 6 ProQuest Central (new) 7 ProQuest Central Korea 8 SciTech Premium Collection 9 Technology Collection 10 ProQuest Central Essentials 11 Engineering Collection (ProQuest)
prefilterarticles
rsrctypearticles
creatorcontrib
 0 Ribeiro-Palau, Rebeca 1 Chen, Shaowen 2 Zeng, Yihang 3 Watanabe, Kenji 4 Taniguchi, Takashi 5 Hone, James 6 Dean, Cory
jtitlearXiv.org
delivery
 delcategory Remote Search Resource fulltext fulltext_linktorsrc
aulast
 0 Ribeiro-Palau 1 Chen 2 Zeng 3 Watanabe 4 Taniguchi 5 Hone 6 Dean
aufirst
 0 Rebeca 1 Shaowen 2 Yihang 3 Kenji 4 Takashi 5 James 6 Cory
au
 0 Ribeiro-Palau, Rebeca 1 Chen, Shaowen 2 Zeng, Yihang 3 Watanabe, Kenji 4 Taniguchi, Takashi 5 Hone, James 6 Dean, Cory
atitleHigh quality electrostatically defined hall bars in monolayer graphene
jtitlearXiv.org
risdate20190122
formatjournal
genrearticle
ristypeJOUR
abstractRealizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the carrier concentration, without compromising the quality of the system. Here, we demonstrate the working principle of a new generation of high quality gate defined graphene samples, where the challenge of doing so in a gapless semiconductor is overcome by using the $$\nu=0$$ insulating state, which emerges at modest applied magnetic fields. In order to verify that the quality of our devices is not compromised by the presence of multiple gates we compare the electronic transport response of different sample geometries, paying close attention to fragile quantum states, such as the fractional quantum Hall (FQH) states, that are highly susceptible to disorder. The ability to define local depletion regions without compromising device quality establishes a new approach towards structuring graphene-based quantum transport devices.
copIthaca
pubCornell University Library, arXiv.org
urlhttp://search.proquest.com/docview/2164931455/