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In-situ strain tuning in hBN-encapsulated graphene electronic devices

Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experime... Full description

Journal Title: arXiv.org Apr 14, 2019
Main Author: Wang, Lujun
Other Authors: Zihlmann, Simon , Baumgartner, Andreas , Overbeck, Jan , Watanabe, Kenji , Taniguchi, Takashi , Makk, Péter , Schönenberger, Christian
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: DOI: 10.1021/acs.nanolett.9b01491
Zum Text:
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recordid: proquest2210268538
title: In-situ strain tuning in hBN-encapsulated graphene electronic devices
format: Article
creator:
  • Wang, Lujun
  • Zihlmann, Simon
  • Baumgartner, Andreas
  • Overbeck, Jan
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Makk, Péter
  • Schönenberger, Christian
subjects:
  • Encapsulation
  • Tuning
  • Graphene
  • Raman Spectroscopy
  • Transport Properties
  • Substrates
  • Graphene
  • Electronic Devices
  • Deformation
  • Mesoscale and Nanoscale Physics
ispartof: arXiv.org, Apr 14, 2019
description: Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudo-magnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices.
language: eng
source:
identifier: DOI: 10.1021/acs.nanolett.9b01491
fulltext: fulltext_linktorsrc
url: Link


@attributes
ID1396745775
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid2210268538
sourceidproquest
recordidTN_proquest2210268538
sourcesystemOther
pqid2210268538
display
typearticle
titleIn-situ strain tuning in hBN-encapsulated graphene electronic devices
creatorWang, Lujun ; Zihlmann, Simon ; Baumgartner, Andreas ; Overbeck, Jan ; Watanabe, Kenji ; Taniguchi, Takashi ; Makk, Péter ; Schönenberger, Christian
contributorSchönenberger, Christian (pacrepositoryorg)
ispartofarXiv.org, Apr 14, 2019
identifierDOI: 10.1021/acs.nanolett.9b01491
subjectEncapsulation ; Tuning ; Graphene ; Raman Spectroscopy ; Transport Properties ; Substrates ; Graphene ; Electronic Devices ; Deformation ; Mesoscale and Nanoscale Physics
descriptionUsing a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudo-magnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices.
languageeng
source
version5
oafree_for_read
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
linktorsrc$$Uhttp://search.proquest.com/docview/2210268538/?pq-origsite=primo$$EView_record_in_ProQuest_(subscribers_only)
search
creatorcontrib
0Wang, Lujun
1Zihlmann, Simon
2Baumgartner, Andreas
3Overbeck, Jan
4Watanabe, Kenji
5Taniguchi, Takashi
6Makk, Péter
7Schönenberger, Christian
titleIn-situ strain tuning in hBN-encapsulated graphene electronic devices
descriptionUsing a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudo-magnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices.
subject
0Encapsulation
1Tuning
2Graphene
3Raman Spectroscopy
4Transport Properties
5Substrates
6Electronic Devices
7Deformation
8Mesoscale and Nanoscale Physics
general
0English
1Cornell University Library, arXiv.org
210.1021/acs.nanolett.9b01491
3Engineering Database
4Publicly Available Content Database
5ProQuest Engineering Collection
6ProQuest Technology Collection
7ProQuest SciTech Collection
8Materials Science & Engineering Database
9ProQuest Central (new)
10ProQuest Central Korea
11SciTech Premium Collection
12Technology Collection
13ProQuest Central Essentials
14Engineering Collection (ProQuest)
sourceidproquest
recordidproquest2210268538
rsrctypearticle
creationdate2019
addtitlearXiv.org
searchscope
01007853
11008875
21008886
31009127
41009240
510000041
610000053
710000120
810000250
910000255
1010000256
1110000258
1210000260
1310000265
1410000268
1510000281
1610000348
1710000356
1810000360
19proquest
scope
01007853
11008875
21008886
31009127
41009240
510000041
610000053
710000120
810000250
910000255
1010000256
1110000258
1210000260
1310000265
1410000268
1510000281
1610000348
1710000356
1810000360
19proquest
lsr43
01007853true
11008875true
21008886true
31009127true
41009240true
510000041true
610000053true
710000120true
810000250true
910000255true
1010000256true
1110000258true
1210000260true
1310000265true
1410000268true
1510000281true
1610000348true
1710000356true
1810000360true
startdate20190414
enddate20190414
lsr30VSR-Enriched:[issue, orcidid, pqid, pages, eissn, issn, vol]
sort
titleIn-situ strain tuning in hBN-encapsulated graphene electronic devices
authorWang, Lujun ; Zihlmann, Simon ; Baumgartner, Andreas ; Overbeck, Jan ; Watanabe, Kenji ; Taniguchi, Takashi ; Makk, Péter ; Schönenberger, Christian
creationdate20190414
lso0120190414
facets
frbrgroupid8945061080086350221
frbrtype5
newrecords20190421
languageeng
creationdate2019
topic
0Encapsulation
1Tuning
2Graphene
3Raman Spectroscopy
4Transport Properties
5Substrates
6Electronic Devices
7Deformation
8Mesoscale and Nanoscale Physics
collection
0Engineering Database
1Publicly Available Content Database
2ProQuest Engineering Collection
3ProQuest Technology Collection
4ProQuest SciTech Collection
5Materials Science & Engineering Database
6ProQuest Central (new)
7ProQuest Central Korea
8SciTech Premium Collection
9Technology Collection
10ProQuest Central Essentials
11Engineering Collection (ProQuest)
prefilterarticles
rsrctypearticles
creatorcontrib
0Wang, Lujun
1Zihlmann, Simon
2Baumgartner, Andreas
3Overbeck, Jan
4Watanabe, Kenji
5Taniguchi, Takashi
6Makk, Péter
7Schönenberger, Christian
jtitlearXiv.org
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext_linktorsrc
addata
aulast
0Wang
1Zihlmann
2Baumgartner
3Overbeck
4Watanabe
5Taniguchi
6Makk
7Schönenberger
aufirst
0Lujun
1Simon
2Andreas
3Jan
4Kenji
5Takashi
6Péter
7Christian
au
0Wang, Lujun
1Zihlmann, Simon
2Baumgartner, Andreas
3Overbeck, Jan
4Watanabe, Kenji
5Taniguchi, Takashi
6Makk, Péter
7Schönenberger, Christian
atitleIn-situ strain tuning in hBN-encapsulated graphene electronic devices
jtitlearXiv.org
risdate20190414
formatjournal
genrearticle
ristypeJOUR
abstractUsing a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudo-magnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices.
copIthaca
pubCornell University Library, arXiv.org
doi10.1021/acs.nanolett.9b01491
urlhttp://search.proquest.com/docview/2210268538/
issue6
orcidid0000-0002-5447-0484
pages4097-4102
volume19
eissn15306992
issn15306984
oafree_for_read
date2019-04-14