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Observation of Defects in Mercury Cadmium Telluride Crystals Grown by Chemical Vapor Transport

A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped... Full description

Journal Title: Appl. Phys. Lett 15 Apr. 1983, Vol.42(8), pp.710-712
Main Author: Irene, E
Other Authors: Tierney, E , Wiedemeier, H , Chandra, D
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951
Link: http://search.proquest.com/docview/23111962/?pq-origsite=primo
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title: Observation of Defects in Mercury Cadmium Telluride Crystals Grown by Chemical Vapor Transport
format: Article
creator:
  • Irene, E
  • Tierney, E
  • Wiedemeier, H
  • Chandra, D
subjects:
  • Mercury Compounds
  • Crystal Lattices
  • Cadmium Compounds
  • Tellurides
  • Crystal Defects
  • Etch Pitting
  • Lattice Defects (MD)
ispartof: Appl. Phys. Lett, 15 Apr. 1983, Vol.42(8), pp.710-712
description: A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second-phase occlusions. The study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics. 8 ref.--AA
language: eng
source:
identifier: ISSN: 0003-6951
fulltext: fulltext
issn:
  • 00036951
  • 0003-6951
url: Link


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titleObservation of Defects in Mercury Cadmium Telluride Crystals Grown by Chemical Vapor Transport
creatorIrene, E ; Tierney, E ; Wiedemeier, H ; Chandra, D
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ispartofAppl. Phys. Lett, 15 Apr. 1983, Vol.42(8), pp.710-712
identifierISSN: 0003-6951
subjectMercury Compounds ; Crystal Lattices ; Cadmium Compounds ; Tellurides ; Crystal Defects ; Etch Pitting ; Lattice Defects (MD)
descriptionA mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second-phase occlusions. The study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics. 8 ref.--AA
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descriptionA mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second-phase occlusions. The study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics. 8 ref.--AA
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titleObservation of Defects in Mercury Cadmium Telluride Crystals Grown by Chemical Vapor Transport
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abstractA mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second-phase occlusions. The study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics. 8 ref.--AA
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date1983-04-15