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Anodic Sulfide Films on Hg sub 1--x Cd sub x Te

A novel anodic sulfidization process for forming native sulfide films on Hg sub 1--x Cd sub x Te is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native h... Full description

Journal Title: Appl. Phys. Lett 15 Feb. 1984, Vol.44(4), pp.443-444
Main Author: Nemirovsky, Y
Other Authors: Burstein, L
Format: Electronic Article Electronic Article
Language: English
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Quelle: © ProQuest LLC All rights reserved
ID: ISSN: 0003-6951
Link: http://search.proquest.com/docview/24286861/
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title: Anodic Sulfide Films on Hg sub 1--x Cd sub x Te
format: Article
creator:
  • Nemirovsky, Y
  • Burstein, L
subjects:
  • Mercury Compounds
  • Reactions (Chemical)
  • Cadmium Compounds
  • Tellurides
  • Sulfidization
  • Passivation
  • Chemical and Electrochemical Properties (MD)
ispartof: Appl. Phys. Lett, 15 Feb. 1984, Vol.44(4), pp.443-444
description: A novel anodic sulfidization process for forming native sulfide films on Hg sub 1--x Cd sub x Te is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low negative fixed surface charge density approx --1 x 10 exp 11 e cm exp --2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p-type Hg sub 1--x Cd sub x Te practically at flat band and in this respect are superior to native oxide films which invert the surface of p-type material. The new surface passivation is particularly suitable for photovoltaic diodes implemented on p-type Hg sub 1--x Cd sub x Te. 11 ref.--AA
language: eng
source: © ProQuest LLC All rights reserved
identifier: ISSN: 0003-6951
fulltext: fulltext
issn:
  • 00036951
  • 0003-6951
url: Link


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titleAnodic Sulfide Films on Hg sub 1--x Cd sub x Te
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ispartofAppl. Phys. Lett, 15 Feb. 1984, Vol.44(4), pp.443-444
identifierISSN: 0003-6951
subjectMercury Compounds ; Reactions (Chemical) ; Cadmium Compounds ; Tellurides ; Sulfidization ; Passivation ; Chemical and Electrochemical Properties (MD)
descriptionA novel anodic sulfidization process for forming native sulfide films on Hg sub 1--x Cd sub x Te is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low negative fixed surface charge density approx --1 x 10 exp 11 e cm exp --2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p-type Hg sub 1--x Cd sub x Te practically at flat band and in this respect are superior to native oxide films which invert the surface of p-type material. The new surface passivation is particularly suitable for photovoltaic diodes implemented on p-type Hg sub 1--x Cd sub x Te. 11 ref.--AA
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descriptionA novel anodic sulfidization process for forming native sulfide films on Hg sub 1--x Cd sub x Te is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low negative fixed surface charge density approx --1 x 10 exp 11 e cm exp --2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p-type Hg sub 1--x Cd sub x Te practically at flat band and in this respect are superior to native oxide films which invert the surface of p-type material. The new surface passivation is particularly suitable for photovoltaic diodes implemented on p-type Hg sub 1--x Cd sub x Te. 11 ref.--AA
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abstractA novel anodic sulfidization process for forming native sulfide films on Hg sub 1--x Cd sub x Te is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low negative fixed surface charge density approx --1 x 10 exp 11 e cm exp --2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p-type Hg sub 1--x Cd sub x Te practically at flat band and in this respect are superior to native oxide films which invert the surface of p-type material. The new surface passivation is particularly suitable for photovoltaic diodes implemented on p-type Hg sub 1--x Cd sub x Te. 11 ref.--AA
urlhttp://search.proquest.com/docview/24286861/
date1984-02-15