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ARSENIC INCORPORATION DURING MBE GROWTH OF HgCdTe

Authors discuss the equilibrium model of the amphoteric behavior of As in HgCdTe and its applicability to material grown by MBE. Suggestions are made on how to achieve active incorporation by manipulating the surface orientation, or by using precursors that provide steric hindrance. 22...

Journal Title: Journal of Electronic Materials 1999, Vol.28(6), pp.799-803
Main Author: Berding, M
Other Authors: Sher, A
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
Link: http://search.proquest.com/docview/27115783/?pq-origsite=primo
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recordid: proquest27115783
title: ARSENIC INCORPORATION DURING MBE GROWTH OF HgCdTe
format: Article
creator:
  • Berding, M
  • Sher, A
subjects:
  • Mercury Cadmium Telluride
  • Arsenic
  • Epitaxial Growth
  • Defects
  • Semiconductors
  • Mercury Compounds
  • Semiconductor Growth
  • Molecular Beam Epitaxy
  • Semiconductor Doping
  • Crystal Defects
  • Crystal Orientation
  • Solubility
  • Processing Science (Wc)
  • 712.1 Semiconducting Materials
  • 804.2 Inorganic Compounds
  • 931.3 Atomic and Molecular Physics
  • 933.1.2 Crystal Growth
  • 933.1.1 Crystal Lattice (Ea)
  • Article
ispartof: Journal of Electronic Materials, 1999, Vol.28(6), pp.799-803
description: Authors discuss the equilibrium model of the amphoteric behavior of As in HgCdTe and its applicability to material grown by MBE. Suggestions are made on how to achieve active incorporation by manipulating the surface orientation, or by using precursors that provide steric hindrance. 22...
language: eng
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 03615235
  • 0361-5235
url: Link


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titleARSENIC INCORPORATION DURING MBE GROWTH OF HgCdTe
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subjectMercury Cadmium Telluride ; Arsenic ; Epitaxial Growth ; Defects ; Semiconductors ; Mercury Compounds ; Semiconductor Growth ; Molecular Beam Epitaxy ; Semiconductor Doping ; Crystal Defects ; Crystal Orientation ; Solubility ; Processing Science (Wc) ; 712.1 Semiconducting Materials ; 804.2 Inorganic Compounds ; 931.3 Atomic and Molecular Physics ; 933.1.2 Crystal Growth ; 933.1.1 Crystal Lattice (Ea) ; Article
descriptionAuthors discuss the equilibrium model of the amphoteric behavior of As in HgCdTe and its applicability to material grown by MBE. Suggestions are made on how to achieve active incorporation by manipulating the surface orientation, or by using precursors that provide steric hindrance. 22...
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titleARSENIC INCORPORATION DURING MBE GROWTH OF HgCdTe
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abstractAuthors discuss the equilibrium model of the amphoteric behavior of As in HgCdTe and its applicability to material grown by MBE. Suggestions are made on how to achieve active incorporation by manipulating the surface orientation, or by using precursors that provide steric hindrance. 22...
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date1999-01-01