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LOW TEMPERATURE PRESSURELESS SINTERING OF SiC USING AN ALUMINIUM BOROCARBIDE ADDITIVE

The densification of an Al3BC3-SiC system during pressureless sintering was investigated. Densification of SiC was achieved after sintering at 1850 C for 2 h by adding 10 wt% Al3BC3. The formation of partly crystallised grain boundaries and a core-rim structure within the SiC grains indicated that l... Full description

Journal Title: Journal of the American Ceramic Society 2011, Vol.94(9), pp.2746-2748
Main Author: Lee, S-H
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0002-7820
Link: http://search.proquest.com/docview/963889614/?pq-origsite=primo
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title: LOW TEMPERATURE PRESSURELESS SINTERING OF SiC USING AN ALUMINIUM BOROCARBIDE ADDITIVE
format: Article
creator:
  • Lee, S-H
subjects:
  • Additives
  • Densification
  • Grain Boundaries
  • Loose Powder Sintering
  • Pressureless Sintering
  • Shrinkage
  • Silicon Carbide
  • Sintering (Powder Metallurgy)
  • General (Wc)
  • General and Nonclassified (EC)
  • Shaping (AI)
ispartof: Journal of the American Ceramic Society, 2011, Vol.94(9), pp.2746-2748
description: The densification of an Al3BC3-SiC system during pressureless sintering was investigated. Densification of SiC was achieved after sintering at 1850 C for 2 h by adding 10 wt% Al3BC3. The formation of partly crystallised grain boundaries and a core-rim structure within the SiC grains indicated that liquid phase sintering was the major densification mechanism. The initial shrinkage at 1430 C was caused by the formation of a liquid silicate phase. Sintering shrinkage accelerated above 1580 C due to the rearrangement of SiC particles. The dissolution-reprecipitation of SiC and the final removal of pores occurred above 1780 C. In contrast to Al2O3 additives, Al3BC3 strongly promoted the pressureless sintering of SiC.
language: eng
source:
identifier: ISSN: 0002-7820
fulltext: fulltext
issn:
  • 00027820
  • 0002-7820
url: Link


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titleLOW TEMPERATURE PRESSURELESS SINTERING OF SiC USING AN ALUMINIUM BOROCARBIDE ADDITIVE
creatorLee, S-H
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ispartofJournal of the American Ceramic Society, 2011, Vol.94(9), pp.2746-2748
identifierISSN: 0002-7820
subjectAdditives ; Densification ; Grain Boundaries ; Loose Powder Sintering ; Pressureless Sintering ; Shrinkage ; Silicon Carbide ; Sintering (Powder Metallurgy) ; General (Wc) ; General and Nonclassified (EC) ; Shaping (AI)
descriptionThe densification of an Al3BC3-SiC system during pressureless sintering was investigated. Densification of SiC was achieved after sintering at 1850 C for 2 h by adding 10 wt% Al3BC3. The formation of partly crystallised grain boundaries and a core-rim structure within the SiC grains indicated that liquid phase sintering was the major densification mechanism. The initial shrinkage at 1430 C was caused by the formation of a liquid silicate phase. Sintering shrinkage accelerated above 1580 C due to the rearrangement of SiC particles. The dissolution-reprecipitation of SiC and the final removal of pores occurred above 1780 C. In contrast to Al2O3 additives, Al3BC3 strongly promoted the pressureless sintering of SiC.
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titleLOW TEMPERATURE PRESSURELESS SINTERING OF SiC USING AN ALUMINIUM BOROCARBIDE ADDITIVE
descriptionThe densification of an Al3BC3-SiC system during pressureless sintering was investigated. Densification of SiC was achieved after sintering at 1850 C for 2 h by adding 10 wt% Al3BC3. The formation of partly crystallised grain boundaries and a core-rim structure within the SiC grains indicated that liquid phase sintering was the major densification mechanism. The initial shrinkage at 1430 C was caused by the formation of a liquid silicate phase. Sintering shrinkage accelerated above 1580 C due to the rearrangement of SiC particles. The dissolution-reprecipitation of SiC and the final removal of pores occurred above 1780 C. In contrast to Al2O3 additives, Al3BC3 strongly promoted the pressureless sintering of SiC.
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abstractThe densification of an Al3BC3-SiC system during pressureless sintering was investigated. Densification of SiC was achieved after sintering at 1850 C for 2 h by adding 10 wt% Al3BC3. The formation of partly crystallised grain boundaries and a core-rim structure within the SiC grains indicated that liquid phase sintering was the major densification mechanism. The initial shrinkage at 1430 C was caused by the formation of a liquid silicate phase. Sintering shrinkage accelerated above 1580 C due to the rearrangement of SiC particles. The dissolution-reprecipitation of SiC and the final removal of pores occurred above 1780 C. In contrast to Al2O3 additives, Al3BC3 strongly promoted the pressureless sintering of SiC.
urlhttp://search.proquest.com/docview/963889614/
doi10.1111/j.1551-2916.2011.04688.x
eissn15512916
date2011-01-01