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Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the... Full description

Journal Title: Nature Communications 2018, Vol.9
Main Author: Son, Jangyup
Other Authors: Kwon, Junyoung , Kim, Sunphil , Lv, Yinchuan , Yu, Jaehyung , Lee, Jong-Young , Ryu, Huije , Watanabe, Kenji , Taniguchi, Takashi , Garrido-Menacho, Rita , Mason, Nadya , Ertekin, Elif , Huang, Pinshane Y , Lee, Gwan-Hyoung , Van Der Zande, Arend M
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Author Correction
ID: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-07297-5 ; PMCID: 6244009 ; PMID: 30459307
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recordid: pubmed_central6244009
title: Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
format: Article
creator:
  • Son, Jangyup
  • Kwon, Junyoung
  • Kim, Sunphil
  • Lv, Yinchuan
  • Yu, Jaehyung
  • Lee, Jong-Young
  • Ryu, Huije
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Garrido-Menacho, Rita
  • Mason, Nadya
  • Ertekin, Elif
  • Huang, Pinshane Y
  • Lee, Gwan-Hyoung
  • Van Der Zande, Arend M
subjects:
  • Author Correction
ispartof: Nature Communications, 2018, Vol.9
description: The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘μ = σ/ne ’ in place of ‘μ = ne/σ ’. This has been corrected in both the PDF and HTML versions of the Article.
language:
source:
identifier: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-07297-5 ; PMCID: 6244009 ; PMID: 30459307
fulltext: fulltext
issn:
  • 2041-1723
  • 20411723
url: Link


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titleAuthor Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
creatorSon, Jangyup ; Kwon, Junyoung ; Kim, Sunphil ; Lv, Yinchuan ; Yu, Jaehyung ; Lee, Jong-Young ; Ryu, Huije ; Watanabe, Kenji ; Taniguchi, Takashi ; Garrido-Menacho, Rita ; Mason, Nadya ; Ertekin, Elif ; Huang, Pinshane Y ; Lee, Gwan-Hyoung ; Van Der Zande, Arend M
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descriptionThe original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘μ = σ/ne ’ in place of ‘μ = ne/σ ’. This has been corrected in both the PDF and HTML versions of the Article.
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titleAuthor Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
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