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Synthesis and field emission properties of silicon carbide nanobelts with a median ridge

-Silicon carbide (-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the -SiC nanobelts with widths of 1.5 m and thickness of about 1020 nm consist of nanowires with ro... Full description

Journal Title: CrystEngComm 2012, Vol.14(20), pp.6755-6760
Main Author: Meng, Alan
Other Authors: Zhang, Meng , Zhang, Jinli , Li, Zhenjiang
Format: Electronic Article Electronic Article
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ID: ISSN: 1466-8033 ; DOI: 10.1039/c2ce25579k
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recordid: rscc2ce25579k
title: Synthesis and field emission properties of silicon carbide nanobelts with a median ridge
format: Article
creator:
  • Meng, Alan
  • Zhang, Meng
  • Zhang, Jinli
  • Li, Zhenjiang
subjects:
  • Field Emission
  • Nanocomposites
  • Nanomaterials
  • Nanostructure
  • Nanowires
  • Ridges
  • Silicon Carbide
  • Synthesis
  • Atomic and Molecular Structure (So)
ispartof: CrystEngComm, 2012, Vol.14(20), pp.6755-6760
description: -Silicon carbide (-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the -SiC nanobelts with widths of 1.5 m and thickness of about 1020 nm consist of nanowires with rough surfaces in diameters of 100 nm (median ridge) and two symmetrical lateral flakes with uniform width. A reasonable two-step VaporSolid (TSVS) growth mechanism is proposed to explain the formation of the nanobelts on the basis of crystal growth theory. Using the -SiC nanobelts as the cathode, the result of field-emission measurements shows that the turn-on field and threshold field of the -SiC nanobelts are about 3.2 V m 1 and 5.7 V m 1 , respectively. These features make the -SiC nanobelts a promising candidate for field emission displays. The -SiC nanobelts obtained in this work enrich the family of silicon carbides nanostructures; moreover, the method and growth mechanism could be an effective clue and example for the synthesis of belt-like nanostructures of other materials.
language:
source:
identifier: ISSN: 1466-8033 ; DOI: 10.1039/c2ce25579k
fulltext: no_fulltext
issn:
  • 1466-8033
  • 14668033
url: Link


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titleSynthesis and field emission properties of silicon carbide nanobelts with a median ridge
creatorMeng, Alan ; Zhang, Meng ; Zhang, Jinli ; Li, Zhenjiang
ispartofCrystEngComm, 2012, Vol.14(20), pp.6755-6760
identifierISSN: 1466-8033 ; DOI: 10.1039/c2ce25579k
description-Silicon carbide (-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the -SiC nanobelts with widths of 1.5 m and thickness of about 1020 nm consist of nanowires with rough surfaces in diameters of 100 nm (median ridge) and two symmetrical lateral flakes with uniform width. A reasonable two-step VaporSolid (TSVS) growth mechanism is proposed to explain the formation of the nanobelts on the basis of crystal growth theory. Using the -SiC nanobelts as the cathode, the result of field-emission measurements shows that the turn-on field and threshold field of the -SiC nanobelts are about 3.2 V m 1 and 5.7 V m 1 , respectively. These features make the -SiC nanobelts a promising candidate for field emission displays. The -SiC nanobelts obtained in this work enrich the family of silicon carbides nanostructures; moreover, the method and growth mechanism could be an effective clue and example for the synthesis of belt-like nanostructures of other materials.
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subjectField Emission ; Nanocomposites ; Nanomaterials ; Nanostructure ; Nanowires ; Ridges ; Silicon Carbide ; Synthesis ; Atomic and Molecular Structure (So);
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titleSynthesis and field emission properties of silicon carbide nanobelts with a median ridge
description-Silicon carbide (-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the -SiC nanobelts with widths of 1.5 m and thickness of about 1020 nm consist of nanowires with rough surfaces in diameters of 100 nm (median ridge) and two symmetrical lateral flakes with uniform width. A reasonable two-step VaporSolid (TSVS) growth mechanism is proposed to explain the formation of the nanobelts on the basis of crystal growth theory. Using the -SiC nanobelts as the cathode, the result of field-emission measurements shows that the turn-on field and threshold field of the -SiC nanobelts are about 3.2 V m 1 and 5.7 V m 1 , respectively. These features make the -SiC nanobelts a promising candidate for field emission displays. The -SiC nanobelts obtained in this work enrich the family of silicon carbides nanostructures; moreover, the method and growth mechanism could be an effective clue and example for the synthesis of belt-like nanostructures of other materials.
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abstract-Silicon carbide (-SiC) nanobelts with a median ridge have been synthesized for the first time via a template/catalyst-free chemical vapor reaction (CVR) method. The characterization results show that the -SiC nanobelts with widths of 1.5 m and thickness of about 1020 nm consist of nanowires with rough surfaces in diameters of 100 nm (median ridge) and two symmetrical lateral flakes with uniform width. A reasonable two-step VaporSolid (TSVS) growth mechanism is proposed to explain the formation of the nanobelts on the basis of crystal growth theory. Using the -SiC nanobelts as the cathode, the result of field-emission measurements shows that the turn-on field and threshold field of the -SiC nanobelts are about 3.2 V m 1 and 5.7 V m 1 , respectively. These features make the -SiC nanobelts a promising candidate for field emission displays. The -SiC nanobelts obtained in this work enrich the family of silicon carbides nanostructures; moreover, the method and growth mechanism could be an effective clue and example for the synthesis of belt-like nanostructures of other materials.
doi10.1039/c2ce25579k
pages6755-6760
date2012-09-17