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Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for B... Full description

Journal Title: Chemical Communications 2013, Vol.49(73), pp.8075-8077
Main Author: Liu, Yong
Other Authors: Lan, Jinle , Xu, Wei , Liu, Yaochun , Pei, Yan-ling , Cheng, Bo , Liu, Da-bo , Lin, Yuan-hua , Zhao, Li-dong
Format: Electronic Article Electronic Article
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ID: ISSN: 1359-7345 ; E-ISSN: 1364-548X ; DOI: 10.1039/c3cc44578j
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recordid: rscc3cc44578j
title: Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning
format: Article
creator:
  • Liu, Yong
  • Lan, Jinle
  • Xu, Wei
  • Liu, Yaochun
  • Pei, Yan-ling
  • Cheng, Bo
  • Liu, Da-bo
  • Lin, Yuan-hua
  • Zhao, Li-dong
subjects:
  • Thermoelectricity
  • Thermal Conductivity
  • Electrical Conductivity
  • Minority Carriers
  • Tuning
  • Electrical Resistivity
  • Resistivity
  • Heat Transfer
  • Miscellaneous Sciences (So)
  • Components and Materials (General) (Ea)
ispartof: Chemical Communications, 2013, Vol.49(73), pp.8075-8077
description: Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe 0.94 Te 0.06 O.
language:
source:
identifier: ISSN: 1359-7345 ; E-ISSN: 1364-548X ; DOI: 10.1039/c3cc44578j
fulltext: fulltext
issn:
  • 1359-7345
  • 1364-548X
  • 1364548X
  • 13597345
url: Link


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titleEnhanced thermoelectric performance of a BiCuSeO system via band gap tuning
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descriptionUpon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe 0.94 Te 0.06 O.
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subjectThermoelectricity ; Thermal Conductivity ; Electrical Conductivity ; Minority Carriers ; Tuning ; Electrical Resistivity ; Resistivity ; Heat Transfer ; Miscellaneous Sciences (So) ; Components and Materials (General) (Ea);
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titleEnhanced thermoelectric performance of a BiCuSeO system via band gap tuning
descriptionUpon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe 0.94 Te 0.06 O.
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titleEnhanced thermoelectric performance of a BiCuSeO system via band gap tuning
authorLiu, Yong ; Lan, Jinle ; Xu, Wei ; Liu, Yaochun ; Pei, Yan-ling ; Cheng, Bo ; Liu, Da-bo ; Lin, Yuan-hua ; Zhao, Li-dong
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abstractUpon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe 0.94 Te 0.06 O.
doi10.1039/c3cc44578j
pages8075-8077
date2013-08-15