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3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) based conjugated polymers for organic thin film transistors

3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) (EBI) was used as a new electron-acceptor building block for conjugated polymers. Copolymers of EBI and bithiophene exhibited p-type semiconductor performance with hole mobility of up to 0.044 cm 2 V 1 s 1 in organic thin film transistors.

Journal Title: Chemical Communications 2014, Vol.50(49), pp.6509-6512
Main Author: Chen, Shaoyun
Other Authors: Sun, Bin , Guo, Chang , Hong, Wei , Meng, Yuezhong , Li, Yuning
Format: Electronic Article Electronic Article
Language:
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ID: ISSN: 1359-7345 ; E-ISSN: 1364-548X ; DOI: 10.1039/c4cc02840f
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recordid: rscc4cc02840f
title: 3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) based conjugated polymers for organic thin film transistors
format: Article
creator:
  • Chen, Shaoyun
  • Sun, Bin
  • Guo, Chang
  • Hong, Wei
  • Meng, Yuezhong
  • Li, Yuning
subjects:
  • Thin Film Transistors
  • Hole Mobility
  • P-Type Semiconductors
  • Copolymers
  • Polymers
  • Semiconductor Devices
  • Miscellaneous Sciences (So)
  • General and Nonclassified (Ep)
  • General and Nonclassified (Ed)
  • General and Nonclassified (EC)
  • Components and Materials (General) (Ea)
ispartof: Chemical Communications, 2014, Vol.50(49), pp.6509-6512
description: 3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) (EBI) was used as a new electron-acceptor building block for conjugated polymers. Copolymers of EBI and bithiophene exhibited p-type semiconductor performance with hole mobility of up to 0.044 cm 2 V 1 s 1 in organic thin film transistors.
language:
source:
identifier: ISSN: 1359-7345 ; E-ISSN: 1364-548X ; DOI: 10.1039/c4cc02840f
fulltext: fulltext
issn:
  • 1359-7345
  • 1364-548X
  • 1364548X
  • 13597345
url: Link


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description3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) (EBI) was used as a new electron-acceptor building block for conjugated polymers. Copolymers of EBI and bithiophene exhibited p-type semiconductor performance with hole mobility of up to 0.044 cm 2 V 1 s 1 in organic thin film transistors.
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subjectThin Film Transistors ; Hole Mobility ; P-Type Semiconductors ; Copolymers ; Polymers ; Semiconductor Devices ; Miscellaneous Sciences (So) ; General and Nonclassified (Ep) ; General and Nonclassified (Ed) ; General and Nonclassified (EC) ; Components and Materials (General) (Ea);
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title3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) based conjugated polymers for organic thin film transistors
description3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) (EBI) was used as a new electron-acceptor building block for conjugated polymers. Copolymers of EBI and bithiophene exhibited p-type semiconductor performance with hole mobility of up to 0.044 cm 2 V 1 s 1 in organic thin film transistors.
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abstract3,3-(Ethane-1,2-diylidene)bis(indolin-2-one) (EBI) was used as a new electron-acceptor building block for conjugated polymers. Copolymers of EBI and bithiophene exhibited p-type semiconductor performance with hole mobility of up to 0.044 cm 2 V 1 s 1 in organic thin film transistors.
doi10.1039/c4cc02840f
pages6509-6512
date2014-05-22