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Spin-semiconducting properties in silicene nanoribbons

We have investigated the relative stabilities and electronic properties of silicene nanoribbons with sawtooth edges (SSiNRs) by first-principles calculations. The SSiNR is more stable than the zigzag silicene nanoribbon (ZSiNR) and has a ferromagnetic ground state with an intrinsic energy gap betwee... Full description

Journal Title: Physical Chemistry Chemical Physics 2014, Vol.16(29), pp.15477-15482
Main Author: Zhao, Yin-Chang
Other Authors: Ni, Jun
Format: Electronic Article Electronic Article
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ID: ISSN: 1463-9076 ; E-ISSN: 1463-9084 ; DOI: 10.1039/c4cp01549e
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title: Spin-semiconducting properties in silicene nanoribbons
format: Article
creator:
  • Zhao, Yin-Chang
  • Ni, Jun
subjects:
  • Elektrisches Feld
  • Energielücke
  • Ferromagnetismus
  • Fermi-Niveau
  • Druckspannung
  • Chemistry
ispartof: Physical Chemistry Chemical Physics, 2014, Vol.16(29), pp.15477-15482
description: We have investigated the relative stabilities and electronic properties of silicene nanoribbons with sawtooth edges (SSiNRs) by first-principles calculations. The SSiNR is more stable than the zigzag silicene nanoribbon (ZSiNR) and has a ferromagnetic ground state with an intrinsic energy gap between majority and minority spin-polarized bands, which shows that SSiNR is a spin-semiconductor. Under an external transverse electric field, the energy gap decreases and even vanishes. Meanwhile, the charge densities of the two edge bands near the Fermi level become spatially separated at different edges. We find also that the electric field-induced features can be achieved by a suitable uniaxial compressive strain. This can be understood from the effect of the Wilson transition. At last, the electronic structures of SSiNRs tuned by electric field and strain together are studied, showing that a small tensile strain makes the SSiNRs more sensitive to the electric field. These results suggest that the electric field or/and strain modulated SSiNRs have potential applications in silicon-based spintronic nanodevices.
language:
source:
identifier: ISSN: 1463-9076 ; E-ISSN: 1463-9084 ; DOI: 10.1039/c4cp01549e
fulltext: fulltext
issn:
  • 1463-9076
  • 1463-9084
  • 14639084
  • 14639076
url: Link


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descriptionWe have investigated the relative stabilities and electronic properties of silicene nanoribbons with sawtooth edges (SSiNRs) by first-principles calculations. The SSiNR is more stable than the zigzag silicene nanoribbon (ZSiNR) and has a ferromagnetic ground state with an intrinsic energy gap between majority and minority spin-polarized bands, which shows that SSiNR is a spin-semiconductor. Under an external transverse electric field, the energy gap decreases and even vanishes. Meanwhile, the charge densities of the two edge bands near the Fermi level become spatially separated at different edges. We find also that the electric field-induced features can be achieved by a suitable uniaxial compressive strain. This can be understood from the effect of the Wilson transition. At last, the electronic structures of SSiNRs tuned by electric field and strain together are studied, showing that a small tensile strain makes the SSiNRs more sensitive to the electric field. These results suggest that the electric field or/and strain modulated SSiNRs have potential applications in silicon-based spintronic nanodevices.
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titleSpin-semiconducting properties in silicene nanoribbons
descriptionWe have investigated the relative stabilities and electronic properties of silicene nanoribbons with sawtooth edges (SSiNRs) by first-principles calculations. The SSiNR is more stable than the zigzag silicene nanoribbon (ZSiNR) and has a ferromagnetic ground state with an intrinsic energy gap between majority and minority spin-polarized bands, which shows that SSiNR is a spin-semiconductor. Under an external transverse electric field, the energy gap decreases and even vanishes. Meanwhile, the charge densities of the two edge bands near the Fermi level become spatially separated at different edges. We find also that the electric field-induced features can be achieved by a suitable uniaxial compressive strain. This can be understood from the effect of the Wilson transition. At last, the electronic structures of SSiNRs tuned by electric field and strain together are studied, showing that a small tensile strain makes the SSiNRs more sensitive to the electric field. These results suggest that the electric field or/and strain modulated SSiNRs have potential applications in silicon-based spintronic nanodevices.
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abstractWe have investigated the relative stabilities and electronic properties of silicene nanoribbons with sawtooth edges (SSiNRs) by first-principles calculations. The SSiNR is more stable than the zigzag silicene nanoribbon (ZSiNR) and has a ferromagnetic ground state with an intrinsic energy gap between majority and minority spin-polarized bands, which shows that SSiNR is a spin-semiconductor. Under an external transverse electric field, the energy gap decreases and even vanishes. Meanwhile, the charge densities of the two edge bands near the Fermi level become spatially separated at different edges. We find also that the electric field-induced features can be achieved by a suitable uniaxial compressive strain. This can be understood from the effect of the Wilson transition. At last, the electronic structures of SSiNRs tuned by electric field and strain together are studied, showing that a small tensile strain makes the SSiNRs more sensitive to the electric field. These results suggest that the electric field or/and strain modulated SSiNRs have potential applications in silicon-based spintronic nanodevices.
doi10.1039/c4cp01549e
pages15477-15482
date2014-07-02