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Nitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations

Nitrogen-doped SiC nanowires (N-doped SiC NWs) with a nitrogen content from 0.975 wt% to 2.265 wt% have been synthesized via a one-step chemical vapor reaction (CVR), where melamine served as both the carbon and nitrogen source. Interestingly, the morphology of the products changed from slightly cur... Full description

Journal Title: Physical Chemistry Chemical Physics 2015, Vol.17(43), pp.28658-28665
Main Author: Zhao, Jian
Other Authors: Meng, Alan , Zhang, Meng , Ren, Weipeng , Li, Zhenjiang
Format: Electronic Article Electronic Article
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ID: ISSN: 1463-9076 ; E-ISSN: 1463-9084 ; DOI: 10.1039/c5cp04064g
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recordid: rscc5cp04064g
title: Nitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations
format: Article
creator:
  • Zhao, Jian
  • Meng, Alan
  • Zhang, Meng
  • Ren, Weipeng
  • Li, Zhenjiang
subjects:
  • Mathematical Models
  • Carbon
  • Field Emission
  • Banded Structure
  • Morphology
  • Silicon Carbide
  • Nanowires
  • Optimization
  • Miscellaneous Sciences (So)
  • Chemical and Electrochemical Properties (MD)
  • Chemical and Electrochemical Properties (Ep)
  • Chemical and Electrochemical Properties (Ed)
  • Chemical and Electrochemical Properties (EC)
ispartof: Physical Chemistry Chemical Physics, 2015, Vol.17(43), pp.28658-28665
description: Nitrogen-doped SiC nanowires (N-doped SiC NWs) with a nitrogen content from 0.975 wt% to 2.265 wt% have been synthesized via a one-step chemical vapor reaction (CVR), where melamine served as both the carbon and nitrogen source. Interestingly, the morphology of the products changed from slightly curled to very curled with crowding together with the increase of N dopants, which was interpreted reasonably by the proposed N-doping growth model of SiC NWs. In addition, according to the electronic structure calculation results, the band gap is narrowed progressively with the increase of N content, which greatly enhances the field emission (FE) properties. However, the experimental results of the FE measurements substantiate that only when the N content takes an optimal value can the N-doped SiC NWs act as candidates for field emitters with very low turn-on fields ( E to ) of 1.5 V m 1 and threshold fields ( E thr ) of 4 V m 1 . On the basis of the aforementioned phenomenon, a universal cooperativity mechanism was put forward to explain the effect of the N content and morphology on the FE properties of the N-doped SiC NWs.
language:
source:
identifier: ISSN: 1463-9076 ; E-ISSN: 1463-9084 ; DOI: 10.1039/c5cp04064g
fulltext: no_fulltext
issn:
  • 1463-9076
  • 1463-9084
  • 14639084
  • 14639076
url: Link


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titleNitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations
creatorZhao, Jian ; Meng, Alan ; Zhang, Meng ; Ren, Weipeng ; Li, Zhenjiang
ispartofPhysical Chemistry Chemical Physics, 2015, Vol.17(43), pp.28658-28665
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descriptionNitrogen-doped SiC nanowires (N-doped SiC NWs) with a nitrogen content from 0.975 wt% to 2.265 wt% have been synthesized via a one-step chemical vapor reaction (CVR), where melamine served as both the carbon and nitrogen source. Interestingly, the morphology of the products changed from slightly curled to very curled with crowding together with the increase of N dopants, which was interpreted reasonably by the proposed N-doping growth model of SiC NWs. In addition, according to the electronic structure calculation results, the band gap is narrowed progressively with the increase of N content, which greatly enhances the field emission (FE) properties. However, the experimental results of the FE measurements substantiate that only when the N content takes an optimal value can the N-doped SiC NWs act as candidates for field emitters with very low turn-on fields ( E to ) of 1.5 V m 1 and threshold fields ( E thr ) of 4 V m 1 . On the basis of the aforementioned phenomenon, a universal cooperativity mechanism was put forward to explain the effect of the N content and morphology on the FE properties of the N-doped SiC NWs.
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subjectMathematical Models ; Carbon ; Field Emission ; Banded Structure ; Morphology ; Silicon Carbide ; Nanowires ; Optimization ; Miscellaneous Sciences (So) ; Chemical and Electrochemical Properties (MD) ; Chemical and Electrochemical Properties (Ep) ; Chemical and Electrochemical Properties (Ed) ; Chemical and Electrochemical Properties (EC);
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titleNitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations
descriptionNitrogen-doped SiC nanowires (N-doped SiC NWs) with a nitrogen content from 0.975 wt% to 2.265 wt% have been synthesized via a one-step chemical vapor reaction (CVR), where melamine served as both the carbon and nitrogen source. Interestingly, the morphology of the products changed from slightly curled to very curled with crowding together with the increase of N dopants, which was interpreted reasonably by the proposed N-doping growth model of SiC NWs. In addition, according to the electronic structure calculation results, the band gap is narrowed progressively with the increase of N content, which greatly enhances the field emission (FE) properties. However, the experimental results of the FE measurements substantiate that only when the N content takes an optimal value can the N-doped SiC NWs act as candidates for field emitters with very low turn-on fields ( E to ) of 1.5 V m 1 and threshold fields ( E thr ) of 4 V m 1 . On the basis of the aforementioned phenomenon, a universal cooperativity mechanism was put forward to explain the effect of the N content and morphology on the FE properties of the N-doped SiC NWs.
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titleNitrogen content and morphology dependent field emission properties of nitrogen-doped SiC nanowires and density functional calculations
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abstractNitrogen-doped SiC nanowires (N-doped SiC NWs) with a nitrogen content from 0.975 wt% to 2.265 wt% have been synthesized via a one-step chemical vapor reaction (CVR), where melamine served as both the carbon and nitrogen source. Interestingly, the morphology of the products changed from slightly curled to very curled with crowding together with the increase of N dopants, which was interpreted reasonably by the proposed N-doping growth model of SiC NWs. In addition, according to the electronic structure calculation results, the band gap is narrowed progressively with the increase of N content, which greatly enhances the field emission (FE) properties. However, the experimental results of the FE measurements substantiate that only when the N content takes an optimal value can the N-doped SiC NWs act as candidates for field emitters with very low turn-on fields ( E to ) of 1.5 V m 1 and threshold fields ( E thr ) of 4 V m 1 . On the basis of the aforementioned phenomenon, a universal cooperativity mechanism was put forward to explain the effect of the N content and morphology on the FE properties of the N-doped SiC NWs.
doi10.1039/c5cp04064g
pages28658-28665
date2015-10-28