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Properties of laser-induced thermochemical etching of InP

The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar + laser and reactant gas Cl 2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of th... Full description

Journal Title: Journal of Electronic Materials 1988, Vol.17(1), pp.29-32
Main Author: Ding, Li
Other Authors: Mingxin, Qiu , Zhong, Kuang
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235 ; E-ISSN: 1543-186X ; DOI: 10.1007/BF02652229
Link: http://dx.doi.org/10.1007/BF02652229
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recordid: springer_jour10.1007/BF02652229
title: Properties of laser-induced thermochemical etching of InP
format: Article
creator:
  • Ding, Li
  • Mingxin, Qiu
  • Zhong, Kuang
subjects:
  • Ar laser-induced etching
  • thermochemical reaction
  • chlorine
  • indium
  • phosphide kwthreshold.
ispartof: Journal of Electronic Materials, 1988, Vol.17(1), pp.29-32
description: The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar + laser and reactant gas Cl 2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.
language: eng
source:
identifier: ISSN: 0361-5235 ; E-ISSN: 1543-186X ; DOI: 10.1007/BF02652229
fulltext: fulltext
issn:
  • 1543-186X
  • 1543186X
  • 0361-5235
  • 03615235
url: Link


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descriptionThe properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar + laser and reactant gas Cl 2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.
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abstractThe properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar + laser and reactant gas Cl 2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.
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doi10.1007/BF02652229
pages29-32
date1988-01