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SiC nanowires with thickness-controlled SiO 2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties

SiC nanowires with thickness-controlled SiO 2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (H... Full description

Journal Title: Nano Research 2014, Vol.7(4), pp.462-472
Main Author: Li, Zhenjiang
Other Authors: Zhao, Jian , Zhang, Meng , Xia, Jiyin , Meng, Alan
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 1998-0124 ; E-ISSN: 1998-0000 ; DOI: 10.1007/s12274-014-0413-3
Link: http://dx.doi.org/10.1007/s12274-014-0413-3
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recordid: springer_jour10.1007/s12274-014-0413-3
title: SiC nanowires with thickness-controlled SiO 2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties
format: Article
creator:
  • Li, Zhenjiang
  • Zhao, Jian
  • Zhang, Meng
  • Xia, Jiyin
  • Meng, Alan
subjects:
  • SiC nanowires
  • thickness-controlled SiO shell
  • alkaline cleaning
  • kinetic equation
  • photoluminescence properties
ispartof: Nano Research, 2014, Vol.7(4), pp.462-472
description: SiC nanowires with thickness-controlled SiO 2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO 2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol·L −1 NaOH solution for 40 min at 70 °C. A mechanism for the removal of the SiO 2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO 2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence (PL) measurement results showed that the SiC nanowires sheathed with an optimum SiO 2 thickness (3.03 nm) have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO 2 .
language: eng
source:
identifier: ISSN: 1998-0124 ; E-ISSN: 1998-0000 ; DOI: 10.1007/s12274-014-0413-3
fulltext: fulltext
issn:
  • 1998-0000
  • 19980000
  • 1998-0124
  • 19980124
url: Link


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titleSiC nanowires with thickness-controlled SiO 2 shells: Fabrication, mechanism, reaction kinetics and photoluminescence properties
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subjectSiC nanowires ; thickness-controlled SiO shell ; alkaline cleaning ; kinetic equation ; photoluminescence properties
descriptionSiC nanowires with thickness-controlled SiO 2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO 2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol·L −1 NaOH solution for 40 min at 70 °C. A mechanism for the removal of the SiO 2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO 2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence (PL) measurement results showed that the SiC nanowires sheathed with an optimum SiO 2 thickness (3.03 nm) have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO 2 .
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descriptionSiC nanowires with thickness-controlled SiO 2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO 2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol·L −1 NaOH solution for 40 min at 70 °C. A mechanism for the removal of the SiO 2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO 2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence (PL) measurement results showed that the SiC nanowires sheathed with an optimum SiO 2 thickness (3.03 nm) have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO 2 .
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abstractSiC nanowires with thickness-controlled SiO 2 shells have been obtained by a simple and efficient method, namely treatment of SiC/SiO2 core-shell nanowires in NaOH solution. The products were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and photoluminescence spectroscopy. The thickness of the SiO 2 shell can be effectively controlled by selecting the appropriate processing time, and pure SiC nanowires were also obtained by alkaline cleaning in 1 mol·L −1 NaOH solution for 40 min at 70 °C. A mechanism for the removal of the SiO 2 shells has been proposed, and a two-phase reaction kinetic equation was derived to explain the rate of the removal of the SiO 2 shells. The validity of this equation was verified by experiment. This work not only describes an effective experimental method for achieving SiC nanowires with thickness-controlled SiO2 coatings but also provides a fundamental theoretical equation with a certain level of generality. In addition, photoluminescence (PL) measurement results showed that the SiC nanowires sheathed with an optimum SiO 2 thickness (3.03 nm) have better photoluminescence properties than either the bare SiC nanowires or SiC nanowires with thicker coatings of SiO 2 .
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pubTsinghua University Press
doi10.1007/s12274-014-0413-3
pages1-11
date2014-04