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Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging

Controllable synthesis of large domain, high‐quality monolayer MoS is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H as carrier gas, the successful synthesis of large domai... Full description

Journal Title: Advanced Functional Materials February 2015, Vol.25(6), pp.842-849
Main Author: Shi, Jianping
Other Authors: Yang, Yang , Zhang, Yu , Ma, Donglin , Wei, Wei , Ji, Qingqing , Zhang, Yanshuo , Song, Xiuju , Gao, Teng , Li, Cong , Bao, Xinhe , Liu, Zhongfan , Fu, Qiang , Zhang, Yanfeng
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ID: ISSN: 1616-301X ; E-ISSN: 1616-3028 ; DOI: 10.1002/adfm.201403659
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recordid: wj10.1002/adfm.201403659
title: Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging
format: Article
creator:
  • Shi, Jianping
  • Yang, Yang
  • Zhang, Yu
  • Ma, Donglin
  • Wei, Wei
  • Ji, Qingqing
  • Zhang, Yanshuo
  • Song, Xiuju
  • Gao, Teng
  • Li, Cong
  • Bao, Xinhe
  • Liu, Zhongfan
  • Fu, Qiang
  • Zhang, Yanfeng
subjects:
  • Chemical Vapor Deposition
  • Crystal Quality
  • Domain Boundary
  • Low‐Energy Electron Microscopy
  • Molybdenum Disulfide
ispartof: Advanced Functional Materials, February 2015, Vol.25(6), pp.842-849
description: Controllable synthesis of large domain, high‐quality monolayer MoS is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H as carrier gas, the successful synthesis of large domain monolayer MoS triangular flakes on Au foils, with the edge length approaching to 80 mm is reported. The growth process is proposed to be mediated by two competitive effects with H acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting MoS flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of MoS flakes directly on Au foils for the first time are further identified. These on‐site and transfer‐free characterizations should shed light on the initial growth and the aggregation of MoS on arbitrary substrates, further guiding the growth toward large domain flakes or monolayer films. is proposed to be mediated by two competitive effects with hydrogen acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting molybdenum disulfide flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of molybdenum disulfide flakes are identified directly on Au foils for the first time.
language:
source:
identifier: ISSN: 1616-301X ; E-ISSN: 1616-3028 ; DOI: 10.1002/adfm.201403659
fulltext: fulltext
issn:
  • 1616-301X
  • 1616301X
  • 1616-3028
  • 16163028
url: Link


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titleMonolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging
creatorShi, Jianping ; Yang, Yang ; Zhang, Yu ; Ma, Donglin ; Wei, Wei ; Ji, Qingqing ; Zhang, Yanshuo ; Song, Xiuju ; Gao, Teng ; Li, Cong ; Bao, Xinhe ; Liu, Zhongfan ; Fu, Qiang ; Zhang, Yanfeng
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subjectChemical Vapor Deposition ; Crystal Quality ; Domain Boundary ; Low‐Energy Electron Microscopy ; Molybdenum Disulfide
descriptionControllable synthesis of large domain, high‐quality monolayer MoS is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H as carrier gas, the successful synthesis of large domain monolayer MoS triangular flakes on Au foils, with the edge length approaching to 80 mm is reported. The growth process is proposed to be mediated by two competitive effects with H acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting MoS flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of MoS flakes directly on Au foils for the first time are further identified. These on‐site and transfer‐free characterizations should shed light on the initial growth and the aggregation of MoS on arbitrary substrates, further guiding the growth toward large domain flakes or monolayer films. is proposed to be mediated by two competitive effects with hydrogen acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting molybdenum disulfide flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of molybdenum disulfide flakes are identified directly on Au foils for the first time.
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titleMonolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging
descriptionControllable synthesis of large domain, high‐quality monolayer MoS is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H as carrier gas, the successful synthesis of large domain monolayer MoS triangular flakes on Au foils, with the edge length approaching to 80 mm is reported. The growth process is proposed to be mediated by two competitive effects with H acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting MoS flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of MoS flakes directly on Au foils for the first time are further identified. These on‐site and transfer‐free characterizations should shed light on the initial growth and the aggregation of MoS on arbitrary substrates, further guiding the growth toward large domain flakes or monolayer films. is proposed to be mediated by two competitive effects with hydrogen acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting molybdenum disulfide flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of molybdenum disulfide flakes are identified directly on Au foils for the first time.
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titleMonolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging
authorShi, Jianping ; Yang, Yang ; Zhang, Yu ; Ma, Donglin ; Wei, Wei ; Ji, Qingqing ; Zhang, Yanshuo ; Song, Xiuju ; Gao, Teng ; Li, Cong ; Bao, Xinhe ; Liu, Zhongfan ; Fu, Qiang ; Zhang, Yanfeng
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abstractControllable synthesis of large domain, high‐quality monolayer MoS is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H as carrier gas, the successful synthesis of large domain monolayer MoS triangular flakes on Au foils, with the edge length approaching to 80 mm is reported. The growth process is proposed to be mediated by two competitive effects with H acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting MoS flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of MoS flakes directly on Au foils for the first time are further identified. These on‐site and transfer‐free characterizations should shed light on the initial growth and the aggregation of MoS on arbitrary substrates, further guiding the growth toward large domain flakes or monolayer films. is proposed to be mediated by two competitive effects with hydrogen acting as both a reduction promoter for efficient sulfurization of MoO and an etching reagent of resulting molybdenum disulfide flakes. By using low‐energy electron microscopy/diffraction, the crystal orientations and domain boundaries of molybdenum disulfide flakes are identified directly on Au foils for the first time.
doi10.1002/adfm.201403659
pages842-849
date2015-02
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