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Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes

are fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, an... Full description

Journal Title: Advanced Materials October 2015, Vol.27(37), pp.5599-5604
Main Author: Liu, Yang Hui
Other Authors: Zhu, Li Qiang , Feng, Ping , Shi, Yi , Wan, Qing
Format: Electronic Article Electronic Article
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ID: ISSN: 0935-9648 ; E-ISSN: 1521-4095 ; DOI: 10.1002/adma.201502719
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recordid: wj10.1002/adma.201502719
title: Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes
format: Article
creator:
  • Liu, Yang Hui
  • Zhu, Li Qiang
  • Feng, Ping
  • Shi, Yi
  • Wan, Qing
subjects:
  • Chitosan Membranes
  • Freestanding Synaptic Transistors
  • Spiking Logic
  • Synaptic Plasticity
ispartof: Advanced Materials, October 2015, Vol.27(37), pp.5599-5604
description: are fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
language:
source:
identifier: ISSN: 0935-9648 ; E-ISSN: 1521-4095 ; DOI: 10.1002/adma.201502719
fulltext: fulltext
issn:
  • 0935-9648
  • 09359648
  • 1521-4095
  • 15214095
url: Link


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titleFreestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes
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subjectChitosan Membranes ; Freestanding Synaptic Transistors ; Spiking Logic ; Synaptic Plasticity
descriptionare fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
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titleFreestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes
descriptionare fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
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abstractare fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
doi10.1002/adma.201502719
pages5599-5604
date2015-10